Performance improvement of Sb                         2                         Te                         3                          phase change material by Al doping

Cheng Peng; Liangcai Wu; Zhitang Song; Feng Rao; Min Zhu; Xuelai Li; Bo Liu; Limin Cheng; Songlin Feng; Pingxiong Yang; Junhao Chu

doi:10.1016/j.apsusc.2011.07.072

Performance improvement of Sb ₂ Te ₃ phase change material by Al doping

Cheng Peng^*
, Liangcai Wu
, Zhitang Song
, Feng Rao
, Min Zhu
, Xuelai Li
, Bo Liu
, Limin Cheng
, Songlin Feng
, Pingxiong Yang
, Junhao Chu

^*此作品的通讯作者

物理与电子科学学院

East China Normal University
CAS - Shanghai Institute of Microsystem and Information Technology

科研成果: 期刊稿件 › 文章 › 同行评审

81 引用（Scopus）

摘要

Al doped Sb ₂ Te ₃ material was proposed to improve the performance of phase-change memory. Crystallization temperature, activation energy, and electrical resistance of the Al doped Sb ₂ Te ₃ films increase markedly with the increasing of Al concentration. The additional Al-Sb and Al-Te bonds enhance the amorphous thermal stability of the material. Al _0.69 Sb ₂ Te ₃ material has a better data retention (10 years at 110 °C) than that of Ge ₂ Sb ₂ Te ₅ material (10 years at 87 °C). With a 100 ns width voltage pulse, SET and RESET voltages of 1.3 and 3.3 V are achieved for the Al _0.69 Sb ₂ Te ₃ based device.

源语言	英语
页（从-至）	10667-10670
页数	4
期刊	Applied Surface Science
卷	257
期	24
DOI	https://doi.org/10.1016/j.apsusc.2011.07.072
出版状态	已出版 - 1 10月 2011

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10.1016/j.apsusc.2011.07.072

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Peng, C., Wu, L., Song, Z., Rao, F., Zhu, M., Li, X., Liu, B., Cheng, L., Feng, S., Yang, P., & Chu, J. (2011). Performance improvement of Sb ₂ Te ₃ phase change material by Al doping Applied Surface Science, 257(24), 10667-10670. https://doi.org/10.1016/j.apsusc.2011.07.072

@article{3c20f62f474b4a11829cdee3390719d2,

title = " Performance improvement of Sb 2 Te 3 phase change material by Al doping ",

abstract = " Al doped Sb 2 Te 3 material was proposed to improve the performance of phase-change memory. Crystallization temperature, activation energy, and electrical resistance of the Al doped Sb 2 Te 3 films increase markedly with the increasing of Al concentration. The additional Al-Sb and Al-Te bonds enhance the amorphous thermal stability of the material. Al 0.69 Sb 2 Te 3 material has a better data retention (10 years at 110 °C) than that of Ge 2 Sb 2 Te 5 material (10 years at 87 °C). With a 100 ns width voltage pulse, SET and RESET voltages of 1.3 and 3.3 V are achieved for the Al 0.69 Sb 2 Te 3 based device.",

keywords = "Phase transformation, Thermal properties, Thin films, XPS",

author = "Cheng Peng and Liangcai Wu and Zhitang Song and Feng Rao and Min Zhu and Xuelai Li and Bo Liu and Limin Cheng and Songlin Feng and Pingxiong Yang and Junhao Chu",

year = "2011",

month = oct,

day = "1",

doi = "10.1016/j.apsusc.2011.07.072",

language = "英语",

volume = "257",

pages = "10667--10670",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "24",

}

Peng, C, Wu, L, Song, Z, Rao, F, Zhu, M, Li, X, Liu, B, Cheng, L, Feng, S, Yang, P & Chu, J 2011, ' Performance improvement of Sb ₂ Te ₃ phase change material by Al doping ', Applied Surface Science, 卷 257, 号码 24, 页码 10667-10670. https://doi.org/10.1016/j.apsusc.2011.07.072

Performance improvement of Sb ₂ Te ₃ phase change material by Al doping . / Peng, Cheng; Wu, Liangcai; Song, Zhitang 等.
在: Applied Surface Science, 卷 257, 号码 24, 01.10.2011, 页码 10667-10670.

科研成果: 期刊稿件 › 文章 › 同行评审

TY - JOUR

T1 - Performance improvement of Sb 2 Te 3 phase change material by Al doping

AU - Peng, Cheng

AU - Wu, Liangcai

AU - Song, Zhitang

AU - Rao, Feng

AU - Zhu, Min

AU - Li, Xuelai

AU - Liu, Bo

AU - Cheng, Limin

AU - Feng, Songlin

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2011/10/1

Y1 - 2011/10/1

N2 - Al doped Sb 2 Te 3 material was proposed to improve the performance of phase-change memory. Crystallization temperature, activation energy, and electrical resistance of the Al doped Sb 2 Te 3 films increase markedly with the increasing of Al concentration. The additional Al-Sb and Al-Te bonds enhance the amorphous thermal stability of the material. Al 0.69 Sb 2 Te 3 material has a better data retention (10 years at 110 °C) than that of Ge 2 Sb 2 Te 5 material (10 years at 87 °C). With a 100 ns width voltage pulse, SET and RESET voltages of 1.3 and 3.3 V are achieved for the Al 0.69 Sb 2 Te 3 based device.

AB - Al doped Sb 2 Te 3 material was proposed to improve the performance of phase-change memory. Crystallization temperature, activation energy, and electrical resistance of the Al doped Sb 2 Te 3 films increase markedly with the increasing of Al concentration. The additional Al-Sb and Al-Te bonds enhance the amorphous thermal stability of the material. Al 0.69 Sb 2 Te 3 material has a better data retention (10 years at 110 °C) than that of Ge 2 Sb 2 Te 5 material (10 years at 87 °C). With a 100 ns width voltage pulse, SET and RESET voltages of 1.3 and 3.3 V are achieved for the Al 0.69 Sb 2 Te 3 based device.

KW - Phase transformation

KW - Thermal properties

KW - Thin films

KW - XPS

UR - https://www.scopus.com/pages/publications/80052955467

U2 - 10.1016/j.apsusc.2011.07.072

DO - 10.1016/j.apsusc.2011.07.072

M3 - 文章

AN - SCOPUS:80052955467

SN - 0169-4332

VL - 257

SP - 10667

EP - 10670

JO - Applied Surface Science

JF - Applied Surface Science

IS - 24

ER -

Performance improvement of Sb 2 Te 3 phase change material by Al doping

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Performance improvement of Sb ₂ Te ₃ phase change material by Al doping