PbZr_0.5Ti_0.5O₃/La_0.5Sr _0.5CoO₃ heterostructures prepared by chemical solution routes on silicon with no fatigue polarization

PbZr_0.5Ti_0.5O₃/La_0.5Sr _0.5CoO₃ (PZT/LSCO) heterostructures have been grown directly on (100)Si by chemical solution routes. Field-emission scanning electron microscopy and x-ray diffraction analysis show that PZT and LSCO thin films are polycrystalline and entirely perovskite phase. PZT thin films grown on LSCO thin films showed no preferential orientation and excellent ferroelectricity. The remnant polarization P_r is about 22.8 μC/cm² and the coercive field E_c is about 95 kV/cm at an applied electric field of 400 kV/cm. The ferroelectric capacitor has been fabricated and showed no polarization fatigue after 3 × 10⁹ fatigue cycles. The Pt/PZT/LSCO capacitor is suitable for nonvolatile random access memory application.