@inproceedings{d243bf0abbe04929a2c8f24df777eeab,
title = "PbZr0.5Ti0.5O3 thin films prepared on La0.5Sr0.5CoO3/LaNiO3 heterostructures for integrated ferroelectric devices",
abstract = "La0.5Sr0.5CoO3 /LaNiO3 (LSCO/LNO) heterostructures have been grown on Si[100] substrate by chemical solution deposition (MSD) technique. PbZr0.5Ti0.5O3 (PZT) thin films are deposited onto LSCO/LNO heterostructure by a modified sol-gel method. The films were crystallized by rapid thermal annealing (RTA) process. The lowest resistivity (550 μΩ·cm) of LSCO/LNO heterostructures was obtained by annealing at 750°C. Field-emission scanning electron microscopy and X-ray diffraction analysis show that LSCO/LNO and PZT thin films are polycrystalline and entirely perovskite phase. The Pt/PZ|T/LSCO/LNO capacitors were fabricated and showed no polarization fatigue after 109 switching cycles. The remnant polarization Pr and the coercive field Ec are about 28 μC/cm2 and 64 kV/cm, respectively. At a high frequency of 1 MHz, the dielectric constant of PZT thin films is 320.",
author = "Wang, \{G. S.\} and Lai, \{Z. Q.\} and Meng, \{X. J.\} and Sun, \{J. L.\} and J. Yu and Guo, \{S. L.\} and Chu, \{J. H.\}",
note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 ; Conference date: 22-10-2001 Through 25-10-2001",
year = "2001",
doi = "10.1109/ICSICT.2001.981604",
language = "英语",
series = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "718--721",
editor = "Hiroshi Iwai and Paul Yu and Bing-Zong Li and Guo-Ping Ru and Xin-Ping Qu",
booktitle = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",
address = "美国",
}