TY - JOUR
T1 - Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics
AU - Yu, Ke
AU - Zhu, Ziqiang
AU - Wang, Weimin
AU - Chen, Shaoqiang
AU - Li, Qiong
AU - Chen, Qun
AU - Lu, Wei
AU - Zi, Jian
PY - 2004/3
Y1 - 2004/3
N2 - Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm2 was obtained. The emission current density from the SiNC films reached 1 mA/cm2 under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays.
AB - Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm2 was obtained. The emission current density from the SiNC films reached 1 mA/cm2 under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays.
KW - A. Silicon nanocrystallites
KW - E. Electron field emission
UR - https://www.scopus.com/pages/publications/0348231686
U2 - 10.1016/j.ssc.2003.12.013
DO - 10.1016/j.ssc.2003.12.013
M3 - 文章
AN - SCOPUS:0348231686
SN - 0038-1098
VL - 129
SP - 555
EP - 558
JO - Solid State Communications
JF - Solid State Communications
IS - 9
ER -