摘要
A long-wavelength infrared photodetector based on two-dimensional materials working at room temperature would have wide applications in many aspects in remote sensing, thermal imaging, biomedical optics, and medical imaging. However, sub-bandgap light detection in graphene and black phosphorus has been a long-standing scientific challenge because of their low photoresponsivity, instability in the air, and high dark current. In this study, we report a highly sensitive, air-stable, and operable long-wavelength infrared photodetector at room temperature based on PdSe2 phototransistors and their heterostructure. A high photoresponsivity of â42.1 AW-1 (at 10.6 μm) was demonstrated, which is an order of magnitude higher than the current record of platinum diselenide. Moreover, the dark current and noise power density were suppressed effectively by fabricating a van der Waals heterostructure. This work fundamentally contributes to establishing long-wavelength infrared detection by PdSe2 at the forefront of long-IR two-dimensional-materials-based photonics.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 2511-2519 |
| 页数 | 9 |
| 期刊 | ACS Nano |
| 卷 | 13 |
| 期 | 2 |
| DOI | |
| 出版状态 | 已出版 - 26 2月 2019 |
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