Packaged and ESD protected low noise amplifier design

The effects of the package and ESD protection on the performance of the low noise amplifier are studied. By detailedly deriving the equations of the input impedance, transconductance, voltage gain and noise figure, an inductive degeneration common emitter low noise amplifier which is used in an ultra high frequency receiver chip is designed. The designed chip is implemented in a generic low cost 0.8 μm BiC-MOS process, and packaged in an SOIC28 package. The fact that the on-board measured results are very similar with the discussed and simulated results verifies the LNA design and optimization methodologies described in this paper.