Origin of yellow emissions from (In,Ga,Al)N based 450 nm emitting diode lasers

Robert Kernke; Han Wang; Jin Hong; Fangyu Yue; Junhao Chu; Jens W. Tomm

doi:10.1364/OSAC.2.001496

Origin of yellow emissions from (In,Ga,Al)N based 450 nm emitting diode lasers

Robert Kernke
, Han Wang
, Jin Hong
, Fangyu Yue^*
, Junhao Chu
, Jens W. Tomm

^*此作品的通讯作者

物理学院

Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy
East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

Yellow emissions at 580 nm from the operation of 450 nm emitting (In,Ga,Al)N diode lasers are investigated. Spatial and spectral behaviors were analyzed and modeled. Consistent results were obtained and the emission was identified coming from the active region of the laser. This emission has the potential to be useful for analytical purposes, e.g. for the determination of refractive indices or the visualization of non-equilibrium carrier profiles along devices.

源语言	英语
页（从-至）	1496-1501
页数	6
期刊	OSA Continuum
卷	2
期	5
DOI	https://doi.org/10.1364/OSAC.2.001496
出版状态	已出版 - 15 5月 2019

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title = "Origin of yellow emissions from (In,Ga,Al)N based 450 nm emitting diode lasers",

abstract = "Yellow emissions at 580 nm from the operation of 450 nm emitting (In,Ga,Al)N diode lasers are investigated. Spatial and spectral behaviors were analyzed and modeled. Consistent results were obtained and the emission was identified coming from the active region of the laser. This emission has the potential to be useful for analytical purposes, e.g. for the determination of refractive indices or the visualization of non-equilibrium carrier profiles along devices.",

author = "Robert Kernke and Han Wang and Jin Hong and Fangyu Yue and Junhao Chu and Tomm, \{Jens W.\}",

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AU - Kernke, Robert

AU - Wang, Han

AU - Hong, Jin

AU - Yue, Fangyu

AU - Chu, Junhao

AU - Tomm, Jens W.

PY - 2019/5/15

Y1 - 2019/5/15

N2 - Yellow emissions at 580 nm from the operation of 450 nm emitting (In,Ga,Al)N diode lasers are investigated. Spatial and spectral behaviors were analyzed and modeled. Consistent results were obtained and the emission was identified coming from the active region of the laser. This emission has the potential to be useful for analytical purposes, e.g. for the determination of refractive indices or the visualization of non-equilibrium carrier profiles along devices.

AB - Yellow emissions at 580 nm from the operation of 450 nm emitting (In,Ga,Al)N diode lasers are investigated. Spatial and spectral behaviors were analyzed and modeled. Consistent results were obtained and the emission was identified coming from the active region of the laser. This emission has the potential to be useful for analytical purposes, e.g. for the determination of refractive indices or the visualization of non-equilibrium carrier profiles along devices.

UR - https://www.scopus.com/pages/publications/85067789982

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DO - 10.1364/OSAC.2.001496

M3 - 文章

AN - SCOPUS:85067789982

SN - 2578-7519

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SP - 1496

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JO - OSA Continuum

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ER -

Origin of yellow emissions from (In,Ga,Al)N based 450 nm emitting diode lasers

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