Optimization of the cell structure for radiation-hardened power MOSFETs

Power MOSFETs specially designed for space power systems are expected to simultaneously meet the requirements of electrical performance and radiation hardness. Radiationhardened (rad-hard) power MOSFET design can be achieved via cell structure optimization. This paper conducts an investigation of the cell geometrical parameters with major impacts on radiation hardness, and a rad-hard power MOSFET is designed and fabricated. The experimental results validate the devices’ total ionizing dose (TID) and single event effects (SEE) hardness to suitably satisfy most space power system requirements while maintaining acceptable electrical performance.