Nucleation and growth processes during molecular-beam epitaxy of GaAs(001)

H. B. Mao; W. Lu; S. C. Shen

doi:10.1016/0022-0248(95)00026-7

Nucleation and growth processes during molecular-beam epitaxy of GaAs(001)

H. B. Mao^*
, W. Lu
, S. C. Shen

^*此作品的通讯作者

Chinese Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

The nucleation and growth processes of GaAs molecular-beam epitaxy were studied by Monte Carlo simulation. The migration of Ga adatoms on the 2 × 4 GaAs (001) surface is anisotropic which has a great effect on the growth kinetics of GaAs. The density of islands and the density of isolated Ga adatoms were obtained for different growth temperatures at first. The island size distribution at low coverage was also studied. Finally, the correlation function between atoms was studied which directly shows the great anisotropy of the growth process. The correlation function shows that the Ga adatoms are depleted around islands.

源语言	英语
页（从-至）	31-37
页数	7
期刊	Journal of Crystal Growth
卷	151
期	1-2
DOI	https://doi.org/10.1016/0022-0248(95)00026-7
出版状态	已出版 - 2 5月 1995
已对外发布	是

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title = "Nucleation and growth processes during molecular-beam epitaxy of GaAs(001)",

abstract = "The nucleation and growth processes of GaAs molecular-beam epitaxy were studied by Monte Carlo simulation. The migration of Ga adatoms on the 2 × 4 GaAs (001) surface is anisotropic which has a great effect on the growth kinetics of GaAs. The density of islands and the density of isolated Ga adatoms were obtained for different growth temperatures at first. The island size distribution at low coverage was also studied. Finally, the correlation function between atoms was studied which directly shows the great anisotropy of the growth process. The correlation function shows that the Ga adatoms are depleted around islands.",

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T1 - Nucleation and growth processes during molecular-beam epitaxy of GaAs(001)

AU - Mao, H. B.

AU - Lu, W.

AU - Shen, S. C.

PY - 1995/5/2

Y1 - 1995/5/2

N2 - The nucleation and growth processes of GaAs molecular-beam epitaxy were studied by Monte Carlo simulation. The migration of Ga adatoms on the 2 × 4 GaAs (001) surface is anisotropic which has a great effect on the growth kinetics of GaAs. The density of islands and the density of isolated Ga adatoms were obtained for different growth temperatures at first. The island size distribution at low coverage was also studied. Finally, the correlation function between atoms was studied which directly shows the great anisotropy of the growth process. The correlation function shows that the Ga adatoms are depleted around islands.

AB - The nucleation and growth processes of GaAs molecular-beam epitaxy were studied by Monte Carlo simulation. The migration of Ga adatoms on the 2 × 4 GaAs (001) surface is anisotropic which has a great effect on the growth kinetics of GaAs. The density of islands and the density of isolated Ga adatoms were obtained for different growth temperatures at first. The island size distribution at low coverage was also studied. Finally, the correlation function between atoms was studied which directly shows the great anisotropy of the growth process. The correlation function shows that the Ga adatoms are depleted around islands.

UR - https://www.scopus.com/pages/publications/0029632884

U2 - 10.1016/0022-0248(95)00026-7

DO - 10.1016/0022-0248(95)00026-7

M3 - 文章

AN - SCOPUS:0029632884

SN - 0022-0248

VL - 151

SP - 31

EP - 37

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Nucleation and growth processes during molecular-beam epitaxy of GaAs(001)

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