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Novel method to determine base resistance in SiGe HBT HICUM based on rational function fitting

  • Yabin Sun*
  • , Jun Fu
  • , Ji Yang
  • , Jun Xu
  • , Yudong Wang
  • , Wei Zhou
  • , Wei Zhang
  • , Jie Cui
  • , Zhihong Liu
  • *此作品的通讯作者
  • Tsinghua University

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

An accurate and efficient base resistance (RB) extraction methodology for SiGe HBT HICUM model is developed in this paper. Differing from previous methods, the proposed technique is based on the rational function fitting. Two formulas are used to determine the lower and upper limits of RB, and then RB is confined to a very narrow range and can be estimated analytically only from S-parameter data, without any special structures or numerical optimization. The proposed method is successfully applied to SiGe HBTs with different device geometries. Results demonstrate that the average error for extracted RB is less than 2.5% over a wide range of bias points. Therefore, we believe that the proposed technique is a reliable routine applicable to estimation of the base resistance for SiGe HBT HICUM model.

源语言英语
主期刊名Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
编辑Jia Zhou, Ting-Ao Tang
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9781479932962
DOI
出版状态已出版 - 23 1月 2014
已对外发布
活动2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, 中国
期限: 28 10月 201431 10月 2014

出版系列

姓名Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

会议

会议2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
国家/地区中国
Guilin
时期28/10/1431/10/14

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