跳到主要导航 跳到搜索 跳到主要内容

Novel extraction of emitter resistance of SiGe HBTs from forward-Gummel measurements

  • Ji Yang
  • , Jun Fu
  • , Yabin Sun
  • , Yudong Wang
  • , Wei Zhou
  • , Wei Zhang
  • , Jie Cui
  • , Gaoqing Li
  • , Zhihong Liu
  • Tsinghua University

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

A simple dc method for determining the emitter series resistances of bipolar transistors from the measured forward-Gummel characteristics is proposed. The method is successfully applied to a set of SiGe HBTs with different sizes, which have been fabricated and measured over a large temperature range. As a result, the temperature scaling and geometric scaling characteristics of the extracted emitter series resistances are analyzed and discussed.

源语言英语
主期刊名2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9781479923342
DOI
出版状态已出版 - 13 3月 2014
已对外发布
活动2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, 中国
期限: 18 6月 201420 6月 2014

出版系列

姓名2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

会议

会议2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
国家/地区中国
Chengdu
时期18/06/1420/06/14

指纹

探究 'Novel extraction of emitter resistance of SiGe HBTs from forward-Gummel measurements' 的科研主题。它们共同构成独一无二的指纹。

引用此