Novel 3-D Fin-RFET With Dual-Doped Source/Drain to Improve ON-State Current

Schottky barrier reconfigurable field effect transistors (SB-RFETs) have attracted great attention in sub-nanometer devices. However, the poor current drivability limits its further application. In this article, a dual-doped Fin-RFET featuring a vertically stacked source/drain has been proposed for the first time. The 3-D TCAD simulations demonstrate its improved ON-state saturated current (ION) by 8.71 times for n-FET and 10.35 times for p-FET, compared with conventional SB-RFETs. A comprehensive study of physical dimensions and materials in the proposed device is performed for device optimization, including control gate length (LCG), polarity gate length (LPG), fin height (HFin), and spacer dielectric constant (κ SP). Various performance metrics have been taken for evaluation, such as ON-state current ION, OFF-state current IOFF, maximum of transconductance gmax, and cut-off frequency fT. The results of our work offer a valuable reference for the rational design of the proposed device according to diverse customized functions.