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Nonvolatile memory devices based on gold nanoparticle and poly (N-vinylcarbazole) composite

  • Jian Lin
  • , Di Li
  • , Jiang Shan Chen
  • , Jing Hong Li
  • , Dong Ge Ma*
  • *此作品的通讯作者
  • CAS - Changchun Institute of Applied Chemistry
  • University of Chinese Academy of Sciences
  • Tsinghua University

科研成果: 期刊稿件文章同行评审

摘要

A rewritable polymer memory device based on gold nanoparticle doped poly (N-vinylcarbazole) (PVK), which can be easily fabricated by simple spin coating, has been described. An electrical bistable phenomenon is observed in the current-voltage characteristics of this device, and it is found that the electrical bistability is repeatable by proper writing voltage and erasing voltage. The unique behaviour of the devices provides an interesting approach such that doping nanoparticles in polymer can be used to realize high performance nonvolatile polymer memory devices.

源语言英语
页(从-至)3280-3282
页数3
期刊Chinese Physics Letters
24
11
DOI
出版状态已出版 - 1 11月 2007
已对外发布

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