Noise modeling for RF MOSFETs

Yasen Huang; Qian Wang; Cheng Yuan; Jianjun Gao

Noise modeling for RF MOSFETs

Yasen Huang^*
, Qian Wang
, Cheng Yuan
, Jianjun Gao

^*此作品的通讯作者

Southeast University, Nanjing

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

In his paper, noise modeling and parameter extraction techniques for 0.13μm MOSFET device are presented and verified. On the basis of cross correlation matrix technique, the induced gate noise i_g^2̄, channel noise i_d^2̄ and their cross correlation were directly obtained from scattering and RF noise measurement in the form of PRC model parameters. The extracted model shows good agreement with measured noise parameters in 2-8 GHz regime.

源语言	英语
页（从-至）	511-515
页数	5
期刊	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
卷	28
期	4
出版状态	已出版 - 12月 2008
已对外发布	是

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title = "Noise modeling for RF MOSFETs",

abstract = "In his paper, noise modeling and parameter extraction techniques for 0.13μm MOSFET device are presented and verified. On the basis of cross correlation matrix technique, the induced gate noise ig{\=2}, channel noise id{\=2} and their cross correlation were directly obtained from scattering and RF noise measurement in the form of PRC model parameters. The extracted model shows good agreement with measured noise parameters in 2-8 GHz regime.",

keywords = "MOSFET, Noise model, Parameter extraction",

author = "Yasen Huang and Qian Wang and Cheng Yuan and Jianjun Gao",

year = "2008",

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language = "英语",

volume = "28",

pages = "511--515",

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TY - JOUR

T1 - Noise modeling for RF MOSFETs

AU - Huang, Yasen

AU - Wang, Qian

AU - Yuan, Cheng

AU - Gao, Jianjun

PY - 2008/12

Y1 - 2008/12

N2 - In his paper, noise modeling and parameter extraction techniques for 0.13μm MOSFET device are presented and verified. On the basis of cross correlation matrix technique, the induced gate noise ig2̄, channel noise id2̄ and their cross correlation were directly obtained from scattering and RF noise measurement in the form of PRC model parameters. The extracted model shows good agreement with measured noise parameters in 2-8 GHz regime.

AB - In his paper, noise modeling and parameter extraction techniques for 0.13μm MOSFET device are presented and verified. On the basis of cross correlation matrix technique, the induced gate noise ig2̄, channel noise id2̄ and their cross correlation were directly obtained from scattering and RF noise measurement in the form of PRC model parameters. The extracted model shows good agreement with measured noise parameters in 2-8 GHz regime.

KW - MOSFET

KW - Noise model

KW - Parameter extraction

UR - https://www.scopus.com/pages/publications/58149287715

M3 - 文章

AN - SCOPUS:58149287715

SN - 1000-3819

VL - 28

SP - 511

EP - 515

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 4

ER -

Noise modeling for RF MOSFETs

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