Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

Shuang Guo; Yunfeng Wang; Xiaolong Zhang; Bao Wang; Jinzhong Zhang

doi:10.1016/j.matlet.2022.133199

Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

Shuang Guo^*
, Yunfeng Wang
, Xiaolong Zhang
, Bao Wang
, Jinzhong Zhang

^*此作品的通讯作者

Nanyang Institute of Technology
East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

The nitrogen (N) doping effect on crystal structure, optical band gap, and localized states for amorphous/crystalline GeTe films was studied. The crystallization temperature and sheet resistance were improved by N doping. The local bonding structure of amorphous and crystalline N_x(GeTe)_1-x was elucidated by Raman spectra. The changes in optical band gap and localized states density for the films were evaluated by transmittance spectra. The band gap broadening after N doping is crucial to reducing the threshold current for phase change memory.

源语言	英语
期刊论文编号	133199
期刊	Materials Letters
卷	329
DOI	https://doi.org/10.1016/j.matlet.2022.133199
出版状态	已出版 - 15 12月 2022
已对外发布	是

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title = "Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films",

abstract = "The nitrogen (N) doping effect on crystal structure, optical band gap, and localized states for amorphous/crystalline GeTe films was studied. The crystallization temperature and sheet resistance were improved by N doping. The local bonding structure of amorphous and crystalline Nx(GeTe)1-x was elucidated by Raman spectra. The changes in optical band gap and localized states density for the films were evaluated by transmittance spectra. The band gap broadening after N doping is crucial to reducing the threshold current for phase change memory.",

keywords = "Crystal structure, Localized states, Nitrogen doped GeTe, Optical band gap, Phase transformation",

author = "Shuang Guo and Yunfeng Wang and Xiaolong Zhang and Bao Wang and Jinzhong Zhang",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = dec,

day = "15",

doi = "10.1016/j.matlet.2022.133199",

language = "英语",

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journal = "Materials Letters",

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TY - JOUR

T1 - Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

AU - Guo, Shuang

AU - Wang, Yunfeng

AU - Zhang, Xiaolong

AU - Wang, Bao

AU - Zhang, Jinzhong

PY - 2022/12/15

Y1 - 2022/12/15

N2 - The nitrogen (N) doping effect on crystal structure, optical band gap, and localized states for amorphous/crystalline GeTe films was studied. The crystallization temperature and sheet resistance were improved by N doping. The local bonding structure of amorphous and crystalline Nx(GeTe)1-x was elucidated by Raman spectra. The changes in optical band gap and localized states density for the films were evaluated by transmittance spectra. The band gap broadening after N doping is crucial to reducing the threshold current for phase change memory.

AB - The nitrogen (N) doping effect on crystal structure, optical band gap, and localized states for amorphous/crystalline GeTe films was studied. The crystallization temperature and sheet resistance were improved by N doping. The local bonding structure of amorphous and crystalline Nx(GeTe)1-x was elucidated by Raman spectra. The changes in optical band gap and localized states density for the films were evaluated by transmittance spectra. The band gap broadening after N doping is crucial to reducing the threshold current for phase change memory.

KW - Crystal structure

KW - Localized states

KW - Nitrogen doped GeTe

KW - Optical band gap

KW - Phase transformation

UR - https://www.scopus.com/pages/publications/85138779498

U2 - 10.1016/j.matlet.2022.133199

DO - 10.1016/j.matlet.2022.133199

M3 - 文章

AN - SCOPUS:85138779498

SN - 0167-577X

VL - 329

JO - Materials Letters

JF - Materials Letters

M1 - 133199

ER -

Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

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