@inproceedings{bb72907275a2450aae72cd22c01e4c51,
title = "NIR-emitting erbium/oxygen-doped silicon by self-assembled techniques",
abstract = "Self-assembled monolayer (SAM) techniques have been developed to dope silicon surfaces with use of erbium radiation sources. After rapid thermal annealing at 1050°C, surface monolayer structure and dopant concentration distribution were characterized by X-ray photoelectron spectroscopy and secondary ion mass spectroscopy measurements, respectively. A distinctive\textasciicircum{}\{4\}I-\{13/2\}\textbackslash{}rightarrow\textasciicircum{}\{4\}I-\{15/2\} transition of erbium ion (4f) glowing at 1.54 \textbackslash{}mum has been observed at room temperature for these Er/O-doped Si samples. With these preliminary results, it is promising to develop room-temperature silicon-based light-emitting devices and lasers on the basis of these bottom-up SAM techniques.",
keywords = "Erbium doping, NIR luminescence, Self-assembled monolayers, Silicon photonics",
author = "Huimin Wen and Jiajing He and Jin Hong and Fangyu Yue and Yaping Dan",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 ; Conference date: 12-06-2019 Through 14-06-2019",
year = "2019",
month = jun,
doi = "10.1109/EDSSC.2019.8753996",
language = "英语",
series = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",
address = "美国",
}