Negative capacitance tunneling field-effect transistor for logic electronics and photodetection devices

Low-power consumption field-effect transistors leveraging quantum mechanical tunneling and negative capacitance effects hold significant potential in electronic and optoelectronic fields. However, challenges such as the low on-current of tunnel field-effect transistors and current hysteresis in negative capacitance field-effect transistors hinder their applications. One approach to addressing these drawbacks is to combine the advantages of both mechanisms to develope negative capacitance tunnel field-effect transistor devices. In this research, we report a ReS₂/BP negative capacitance tunnel field-effect transistor based on high-k ferroelectric material zirconium-doped hafnium oxide for electronics and optoelectronic devices. The device achieved subthreshold swing < 60 mV/dec with a minimum subthreshold swing of 13.4 mV/dec and the maximum I_on/I_off ratio of 10⁶ with a low electrical hysteresis. An inverter integrated by a BP p-type field-effect transistor and a ReS₂/BP n-type negative capacitance tunnel field-effect transistor was further demonstrated. Furthermore, the device demonstrated high performance optoelectronic properties. Benefiting from the tunneling process inherent in the type-III junction, the device achieved a response time of 8 µs; and the responsivity of device reached 41 A/W. These results provide a promising method for developing low-power consumption and high-performance electronics and optoelectronics.