Nb1-xO2 based Universal Selector with Ultra-high Endurance (>1012), high speed (10ns) and Excellent Vth Stability

Qing Luo; Jie Yu; Xumeng Zhang; Kan Hao Xue; Jun Hui Yuan; Yan Cheng; Tiancheng Gong; Hangbing Lv; Xiaoxin Xu; Peng Yuan; Jiahao Yin; Lu Tai; Shibing Long; Qi Liu; Xiangshui Miao; Jing Li; Ming Liu

doi:10.23919/VLSIT.2019.8776546

Nb_1-xO2 based Universal Selector with Ultra-high Endurance (>10¹²), high speed (10ns) and Excellent V_th Stability

Qing Luo
, Jie Yu
, Xumeng Zhang
, Kan Hao Xue
, Jun Hui Yuan
, Yan Cheng
, Tiancheng Gong
, Hangbing Lv
, Xiaoxin Xu
, Peng Yuan
, Jiahao Yin
, Lu Tai
, Shibing Long
, Qi Liu
, Xiangshui Miao
, Jing Li
, Ming Liu

物理与电子科学学院

CAS - Institute of Microelectronics
Huazhong University of Science and Technology
University of Wisconsin-Madison

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

33 引用（Scopus）

摘要

In this work, we demonstrate a high performance Nb_1-_xO₂ based selector with thermal feedback mechanism for 3D X-point application. Ultra-high endurance (> 10¹²), high operation speed (10ns), bidirectional operation and excellent V_th stability were achieved. By adding a barrier layer between Nb_1-xO₂ film and electrode, the off-state leakage current was reduced by one order of magnitude (selectivity as high as 500). This work provides a universal selector solution for various emerging memories, including RRAM, MRAM and PCM.

源语言	英语
主期刊名	2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
出版商	Institute of Electrical and Electronics Engineers Inc.
页	T236-T237
ISBN（电子版）	9784863487178
DOI	https://doi.org/10.23919/VLSIT.2019.8776546
出版状态	已出版 - 6月 2019
活动	39th Symposium on VLSI Technology, VLSI Technology 2019 - Kyoto, 日本期限: 9 6月 2019 → 14 6月 2019

出版系列

姓名	Digest of Technical Papers - Symposium on VLSI Technology
卷	2019-June
ISSN（印刷版）	0743-1562

会议

会议	39th Symposium on VLSI Technology, VLSI Technology 2019
国家/地区	日本
市	Kyoto
时期	9/06/19 → 14/06/19

访问文件

10.23919/VLSIT.2019.8776546

其它文件与链接

链接到 Scopus 的出版物

引用此

Luo, Q., Yu, J., Zhang, X., Xue, K. H., Yuan, J. H., Cheng, Y., Gong, T., Lv, H., Xu, X., Yuan, P., Yin, J., Tai, L., Long, S., Liu, Q., Miao, X., Li, J., & Liu, M. (2019). Nb_1-xO2 based Universal Selector with Ultra-high Endurance (>10¹²), high speed (10ns) and Excellent V_th Stability. 在 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers (页码 T236-T237). 文章 8776546 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSIT.2019.8776546

Luo, Qing ; Yu, Jie ; Zhang, Xumeng 等. / Nb_1-xO2 based Universal Selector with Ultra-high Endurance (>10¹²), high speed (10ns) and Excellent V_th Stability. 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2019. 页码 T236-T237 (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{0745eb8cd0ac4ac7bd9aeaae8caf83a6,

title = "Nb1-xO2 based Universal Selector with Ultra-high Endurance (>1012), high speed (10ns) and Excellent Vth Stability",

abstract = "In this work, we demonstrate a high performance Nb1-xO2 based selector with thermal feedback mechanism for 3D X-point application. Ultra-high endurance (> 1012), high operation speed (10ns), bidirectional operation and excellent Vth stability were achieved. By adding a barrier layer between Nb1-xO2 film and electrode, the off-state leakage current was reduced by one order of magnitude (selectivity as high as 500). This work provides a universal selector solution for various emerging memories, including RRAM, MRAM and PCM.",

author = "Qing Luo and Jie Yu and Xumeng Zhang and Xue, \{Kan Hao\} and Yuan, \{Jun Hui\} and Yan Cheng and Tiancheng Gong and Hangbing Lv and Xiaoxin Xu and Peng Yuan and Jiahao Yin and Lu Tai and Shibing Long and Qi Liu and Xiangshui Miao and Jing Li and Ming Liu",

note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.; 39th Symposium on VLSI Technology, VLSI Technology 2019 ; Conference date: 09-06-2019 Through 14-06-2019",

year = "2019",

month = jun,

doi = "10.23919/VLSIT.2019.8776546",

language = "英语",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Luo, Q, Yu, J, Zhang, X, Xue, KH, Yuan, JH, Cheng, Y, Gong, T, Lv, H, Xu, X, Yuan, P, Yin, J, Tai, L, Long, S, Liu, Q, Miao, X, Li, J & Liu, M 2019, Nb_1-xO2 based Universal Selector with Ultra-high Endurance (>10¹²), high speed (10ns) and Excellent V_th Stability. 在 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers., 8776546, Digest of Technical Papers - Symposium on VLSI Technology, 卷 2019-June, Institute of Electrical and Electronics Engineers Inc., 页码 T236-T237, 39th Symposium on VLSI Technology, VLSI Technology 2019, Kyoto, 日本, 9/06/19. https://doi.org/10.23919/VLSIT.2019.8776546

Nb_1-xO2 based Universal Selector with Ultra-high Endurance (>10¹²), high speed (10ns) and Excellent V_th Stability. / Luo, Qing; Yu, Jie; Zhang, Xumeng 等.
2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2019. 页码 T236-T237 8776546 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2019-June).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Nb1-xO2 based Universal Selector with Ultra-high Endurance (>1012), high speed (10ns) and Excellent Vth Stability

AU - Luo, Qing

AU - Yu, Jie

AU - Zhang, Xumeng

AU - Xue, Kan Hao

AU - Yuan, Jun Hui

AU - Cheng, Yan

AU - Gong, Tiancheng

AU - Lv, Hangbing

AU - Xu, Xiaoxin

AU - Yuan, Peng

AU - Yin, Jiahao

AU - Tai, Lu

AU - Long, Shibing

AU - Liu, Qi

AU - Miao, Xiangshui

AU - Li, Jing

AU - Liu, Ming

PY - 2019/6

Y1 - 2019/6

N2 - In this work, we demonstrate a high performance Nb1-xO2 based selector with thermal feedback mechanism for 3D X-point application. Ultra-high endurance (> 1012), high operation speed (10ns), bidirectional operation and excellent Vth stability were achieved. By adding a barrier layer between Nb1-xO2 film and electrode, the off-state leakage current was reduced by one order of magnitude (selectivity as high as 500). This work provides a universal selector solution for various emerging memories, including RRAM, MRAM and PCM.

AB - In this work, we demonstrate a high performance Nb1-xO2 based selector with thermal feedback mechanism for 3D X-point application. Ultra-high endurance (> 1012), high operation speed (10ns), bidirectional operation and excellent Vth stability were achieved. By adding a barrier layer between Nb1-xO2 film and electrode, the off-state leakage current was reduced by one order of magnitude (selectivity as high as 500). This work provides a universal selector solution for various emerging memories, including RRAM, MRAM and PCM.

UR - https://www.scopus.com/pages/publications/85070320840

U2 - 10.23919/VLSIT.2019.8776546

DO - 10.23919/VLSIT.2019.8776546

M3 - 会议稿件

AN - SCOPUS:85070320840

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - T236-T237

BT - 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 39th Symposium on VLSI Technology, VLSI Technology 2019

Y2 - 9 June 2019 through 14 June 2019

ER -

Luo Q, Yu J, Zhang X, Xue KH, Yuan JH, Cheng Y 等. Nb_1-xO2 based Universal Selector with Ultra-high Endurance (>10¹²), high speed (10ns) and Excellent V_th Stability. 在 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2019. 页码 T236-T237. 8776546. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.23919/VLSIT.2019.8776546

Nb1-xO2 based Universal Selector with Ultra-high Endurance (>1012), high speed (10ns) and Excellent Vth Stability

摘要

出版系列

会议

访问文件

其它文件与链接

指纹

引用此

Nb_1-xO2 based Universal Selector with Ultra-high Endurance (>10¹²), high speed (10ns) and Excellent V_th Stability