Monte Carlo simulation of MBE growth on GaAs vicinal surface

Huibing Mao; Wei Lu; Zhaohui Ma; Xingquan Liu; Xuechu Shen

Monte Carlo simulation of MBE growth on GaAs vicinal surface

Huibing Mao^*
, Wei Lu
, Zhaohui Ma
, Xingquan Liu
, Xuechu Shen

^*此作品的通讯作者

Physics

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

In this paper, the MBE nucleation mode on vicinal GaAs(001) surface was simulated by Monte Carlo method. The results show that on A-surface the 2-D nucleation mode is dominant at 800-1000K, on B-surface the 2-D nucleation mode is dominant at low temperature, but at high temperature the step flow mode is dominant. Besides, there is saturation phenomenon at both high and low temperatures.

源语言	英语
页（从-至）	1118-1122
页数	5
期刊	Wuli Xuebao/Acta Physica Sinica
卷	43
期	7
出版状态	已出版 - 7月 1994
已对外发布	是

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@article{fc27f0dec20844c79a32cd27817913c9,

title = "Monte Carlo simulation of MBE growth on GaAs vicinal surface",

abstract = "In this paper, the MBE nucleation mode on vicinal GaAs(001) surface was simulated by Monte Carlo method. The results show that on A-surface the 2-D nucleation mode is dominant at 800-1000K, on B-surface the 2-D nucleation mode is dominant at low temperature, but at high temperature the step flow mode is dominant. Besides, there is saturation phenomenon at both high and low temperatures.",

author = "Huibing Mao and Wei Lu and Zhaohui Ma and Xingquan Liu and Xuechu Shen",

year = "1994",

month = jul,

language = "英语",

volume = "43",

pages = "1118--1122",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

number = "7",

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TY - JOUR

T1 - Monte Carlo simulation of MBE growth on GaAs vicinal surface

AU - Mao, Huibing

AU - Lu, Wei

AU - Ma, Zhaohui

AU - Liu, Xingquan

AU - Shen, Xuechu

PY - 1994/7

Y1 - 1994/7

N2 - In this paper, the MBE nucleation mode on vicinal GaAs(001) surface was simulated by Monte Carlo method. The results show that on A-surface the 2-D nucleation mode is dominant at 800-1000K, on B-surface the 2-D nucleation mode is dominant at low temperature, but at high temperature the step flow mode is dominant. Besides, there is saturation phenomenon at both high and low temperatures.

AB - In this paper, the MBE nucleation mode on vicinal GaAs(001) surface was simulated by Monte Carlo method. The results show that on A-surface the 2-D nucleation mode is dominant at 800-1000K, on B-surface the 2-D nucleation mode is dominant at low temperature, but at high temperature the step flow mode is dominant. Besides, there is saturation phenomenon at both high and low temperatures.

UR - https://www.scopus.com/pages/publications/0028461436

M3 - 文章

AN - SCOPUS:0028461436

SN - 1000-3290

VL - 43

SP - 1118

EP - 1122

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 7

ER -

Monte Carlo simulation of MBE growth on GaAs vicinal surface

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