Modeling of metal-semiconductor-metal photodetector for SPICE

Jianjun Gao; Baoxin Gao; Chunguang Liang

doi:10.1002/1098-2760(20000920)26:6<390::AID-MOP12>3.0.CO;2-W

Modeling of metal-semiconductor-metal photodetector for SPICE

Jianjun Gao^*
, Baoxin Gao
, Chunguang Liang

^*此作品的通讯作者

Tsinghua University
Hebei Semiconductor Research Institute

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

An equivalent circuit model for a metal-semiconductor-metal (MSM) photodetector based on microwave port characteristics is presented for a SPICE simulator. The experiential formulas of dc characteristics and intrinsic capacitance-voltage characteristics are given. The model parameters are obtained from dc and C-V measurement data by using curve fitting. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on MSM PDs of different sizes.

源语言	英语
页（从-至）	390-394
页数	5
期刊	Microwave and Optical Technology Letters
卷	26
期	6
DOI	https://doi.org/10.1002/1098-2760(20000920)26:6<390::AID-MOP12>3.0.CO;2-W
出版状态	已出版 - 20 9月 2000
已对外发布	是

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@article{c55446963bda49b3b4aba9363ebfacda,

title = "Modeling of metal-semiconductor-metal photodetector for SPICE",

abstract = "An equivalent circuit model for a metal-semiconductor-metal (MSM) photodetector based on microwave port characteristics is presented for a SPICE simulator. The experiential formulas of dc characteristics and intrinsic capacitance-voltage characteristics are given. The model parameters are obtained from dc and C-V measurement data by using curve fitting. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on MSM PDs of different sizes.",

author = "Jianjun Gao and Baoxin Gao and Chunguang Liang",

year = "2000",

month = sep,

day = "20",

doi = "10.1002/1098-2760(20000920)26:6<390::AID-MOP12>3.0.CO;2-W",

language = "英语",

volume = "26",

pages = "390--394",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley \& Sons Inc.",

number = "6",

}

TY - JOUR

T1 - Modeling of metal-semiconductor-metal photodetector for SPICE

AU - Gao, Jianjun

AU - Gao, Baoxin

AU - Liang, Chunguang

PY - 2000/9/20

Y1 - 2000/9/20

N2 - An equivalent circuit model for a metal-semiconductor-metal (MSM) photodetector based on microwave port characteristics is presented for a SPICE simulator. The experiential formulas of dc characteristics and intrinsic capacitance-voltage characteristics are given. The model parameters are obtained from dc and C-V measurement data by using curve fitting. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on MSM PDs of different sizes.

AB - An equivalent circuit model for a metal-semiconductor-metal (MSM) photodetector based on microwave port characteristics is presented for a SPICE simulator. The experiential formulas of dc characteristics and intrinsic capacitance-voltage characteristics are given. The model parameters are obtained from dc and C-V measurement data by using curve fitting. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on MSM PDs of different sizes.

UR - https://www.scopus.com/pages/publications/0034272403

U2 - 10.1002/1098-2760(20000920)26:6<390::AID-MOP12>3.0.CO;2-W

DO - 10.1002/1098-2760(20000920)26:6<390::AID-MOP12>3.0.CO;2-W

M3 - 文章

AN - SCOPUS:0034272403

SN - 0895-2477

VL - 26

SP - 390

EP - 394

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 6

ER -

Modeling of metal-semiconductor-metal photodetector for SPICE

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