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Modeling and parameter extraction techniques of silicon-based radio frequency devices

  • Nantong University

科研成果: 书/报告同行评审

摘要

This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods. The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.

源语言英语
出版商World Scientific Publishing Co. Pte Ltd
页数305
ISBN(电子版)9789811255366
ISBN(印刷版)9789811255359
DOI
出版状态已出版 - 21 3月 2023

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