Mobility spectrum analysis of multi-carrier system in HgCdTe

Yongsheng Gui; Guozhen Zheng; Shaoling Guo; Junhao Chu

Mobility spectrum analysis of multi-carrier system in HgCdTe

Yongsheng Gui^*
, Guozhen Zheng
, Shaoling Guo
, Junhao Chu

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

The concentrations and mobilities of bulk electron, bulk hole and interface electron were obtained, respectively, by the mobility spectrum analysis (MSA) for n-type HgCdTe film grown by MBE and LPE techniques. The changes of concentration and mobility for bulk and interface electrons versus temperature were also derived from the MSA, which agrees well with the theoretical analysis.

源语言	英语
页（从-至）	327-332
页数	6
期刊	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
卷	17
期	5
出版状态	已出版 - 1998
已对外发布	是

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title = "Mobility spectrum analysis of multi-carrier system in HgCdTe",

abstract = "The concentrations and mobilities of bulk electron, bulk hole and interface electron were obtained, respectively, by the mobility spectrum analysis (MSA) for n-type HgCdTe film grown by MBE and LPE techniques. The changes of concentration and mobility for bulk and interface electrons versus temperature were also derived from the MSA, which agrees well with the theoretical analysis.",

author = "Yongsheng Gui and Guozhen Zheng and Shaoling Guo and Junhao Chu",

year = "1998",

language = "英语",

volume = "17",

pages = "327--332",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

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publisher = "Chinese Optical Society",

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TY - JOUR

T1 - Mobility spectrum analysis of multi-carrier system in HgCdTe

AU - Gui, Yongsheng

AU - Zheng, Guozhen

AU - Guo, Shaoling

AU - Chu, Junhao

PY - 1998

Y1 - 1998

N2 - The concentrations and mobilities of bulk electron, bulk hole and interface electron were obtained, respectively, by the mobility spectrum analysis (MSA) for n-type HgCdTe film grown by MBE and LPE techniques. The changes of concentration and mobility for bulk and interface electrons versus temperature were also derived from the MSA, which agrees well with the theoretical analysis.

AB - The concentrations and mobilities of bulk electron, bulk hole and interface electron were obtained, respectively, by the mobility spectrum analysis (MSA) for n-type HgCdTe film grown by MBE and LPE techniques. The changes of concentration and mobility for bulk and interface electrons versus temperature were also derived from the MSA, which agrees well with the theoretical analysis.

UR - https://www.scopus.com/pages/publications/0032268042

M3 - 文章

AN - SCOPUS:0032268042

SN - 1001-9014

VL - 17

SP - 327

EP - 332

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 5

ER -

Mobility spectrum analysis of multi-carrier system in HgCdTe

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