Millimeter-Wave Limiter Based on GaN MMIC Technology

In this work, the high-power millimeter-wave limiter based on a gallium nitride (GaN) quasi-vertical structure Schottky barrier diode (SBD) is proposed and validated in the range of 30–36 GHz. The high-doping concentration and thin thickness of the n-layer GaN can effectively reduce the on-resistance of GaN SBD, thereby reducing the insertion loss of limiters. The limiter utilizes GaN MMIC technology to enhance the consistency of multistage circuit manufacturing. In addition, the limiter adopts a three-stage structure design and combines with the power division structure to optimize the power handling capability of the first-stage limiter, further improving the overall system output power capacity. The insertion loss of the limiter is less than 2 dB within the frequency range of 30–36 GHz. This limiter can withstand a pulse input power of 20 W without burning out. The limiter based on GaN SBD exhibits advantages in high frequency and high power.