Microwave noise modeling for InP-InGaAs HBTs

Jianjun Gao; Xiuping Li; Hong Wang; Georg Boeck

doi:10.1109/TMTT.2004.825730

Microwave noise modeling for InP-InGaAs HBTs

Jianjun Gao^*
, Xiuping Li
, Hong Wang
, Georg Boeck

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

23 引用（Scopus）

摘要

Analytical expressions for the noise parameters of microwave InP double heterojunction bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent-circuit model, which takes into account the influences of the base-collector capacitance and the base resistance distributed nature. Pad capacitances and series inductances are also included. Further simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 20 GHz for InP-InGaAs DHBTs with a 5 × 5 μm ² emitter area over a wide range of bias points.

源语言	英语
页（从-至）	1264-1272
页数	9
期刊	IEEE Transactions on Microwave Theory and Techniques
卷	52
期	4
DOI	https://doi.org/10.1109/TMTT.2004.825730
出版状态	已出版 - 4月 2004
已对外发布	是

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@article{40b04a0b776e42c8850b958af2d30684,

title = "Microwave noise modeling for InP-InGaAs HBTs",

abstract = "Analytical expressions for the noise parameters of microwave InP double heterojunction bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent-circuit model, which takes into account the influences of the base-collector capacitance and the base resistance distributed nature. Pad capacitances and series inductances are also included. Further simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 20 GHz for InP-InGaAs DHBTs with a 5 × 5 μm 2 emitter area over a wide range of bias points.",

keywords = "Heterojunction bipolar transistor (HBT), Noise modeling, Parameter extraction",

author = "Jianjun Gao and Xiuping Li and Hong Wang and Georg Boeck",

year = "2004",

month = apr,

doi = "10.1109/TMTT.2004.825730",

language = "英语",

volume = "52",

pages = "1264--1272",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Microwave noise modeling for InP-InGaAs HBTs

AU - Gao, Jianjun

AU - Li, Xiuping

AU - Wang, Hong

AU - Boeck, Georg

PY - 2004/4

Y1 - 2004/4

N2 - Analytical expressions for the noise parameters of microwave InP double heterojunction bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent-circuit model, which takes into account the influences of the base-collector capacitance and the base resistance distributed nature. Pad capacitances and series inductances are also included. Further simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 20 GHz for InP-InGaAs DHBTs with a 5 × 5 μm 2 emitter area over a wide range of bias points.

AB - Analytical expressions for the noise parameters of microwave InP double heterojunction bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent-circuit model, which takes into account the influences of the base-collector capacitance and the base resistance distributed nature. Pad capacitances and series inductances are also included. Further simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 20 GHz for InP-InGaAs DHBTs with a 5 × 5 μm 2 emitter area over a wide range of bias points.

KW - Heterojunction bipolar transistor (HBT)

KW - Noise modeling

KW - Parameter extraction

UR - https://www.scopus.com/pages/publications/2442466814

U2 - 10.1109/TMTT.2004.825730

DO - 10.1109/TMTT.2004.825730

M3 - 文章

AN - SCOPUS:2442466814

SN - 0018-9480

VL - 52

SP - 1264

EP - 1272

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 4

ER -

Microwave noise modeling for InP-InGaAs HBTs

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