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Microwave modeling and parameter extraction method for PHEMT

  • Beijing University of Posts and Telecommunications

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

This paper reviews the characterization technique of pseudomorphic high electron mobility transistors (PHEMT). The linear, nonlinear and noise modeling and corresponding parameter extraction methods are described. The on wafer measurement methods for S parameters and noise parameters are also highlighted.

源语言英语
主期刊名2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
1323-1326
页数4
DOI
出版状态已出版 - 2008
活动2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT - Nanjing, 中国
期限: 21 4月 200824 4月 2008

出版系列

姓名2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
3

会议

会议2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT
国家/地区中国
Nanjing
时期21/04/0824/04/08

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