Microstructure and physical properties of SrBi2Ta2O9 ferroelectric thin films

Ping Xiong Yang; Hong Mei Deng; Li Rong Zheng; Cheng Lu Lin

Microstructure and physical properties of SrBi₂Ta₂O₉ ferroelectric thin films

Ping Xiong Yang^*
, Hong Mei Deng
, Li Rong Zheng
, Cheng Lu Lin

^*此作品的通讯作者

CAS - Shanghai Institute of Microsystem and Information Technology

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

High quality SrBi₂Ta₂O₉ thin films on Pt/Ti/SiO₂/Si substrates were obtained using pulsed laser deposition combined with annealing at 700°C in oxygen. The high diffraction peak of(008) and (115) was characterized by X-ray diffractometer. Good ferroelectric properties were obtained from the thin films; the remnant polarization and coercive field were about 10 μC/cm² and 57 kV/cm, respectively. No fatigue was observed at up to 10¹⁰ switching cycles. Leakage current and the dc breakdown field measurement were about 4 × 10^-8 A/cm² at 5 V and 250 kV/cm, respectively.

源语言	英语
页（从-至）	1455-1456
页数	2
期刊	Wuli Xuebao/Acta Physica Sinica
卷	46
期	7
出版状态	已出版 - 1997
已对外发布	是

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title = "Microstructure and physical properties of SrBi2Ta2O9 ferroelectric thin films",

abstract = "High quality SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates were obtained using pulsed laser deposition combined with annealing at 700°C in oxygen. The high diffraction peak of(008) and (115) was characterized by X-ray diffractometer. Good ferroelectric properties were obtained from the thin films; the remnant polarization and coercive field were about 10 μC/cm2 and 57 kV/cm, respectively. No fatigue was observed at up to 1010 switching cycles. Leakage current and the dc breakdown field measurement were about 4 × 10-8 A/cm2 at 5 V and 250 kV/cm, respectively.",

author = "Yang, \{Ping Xiong\} and Deng, \{Hong Mei\} and Zheng, \{Li Rong\} and Lin, \{Cheng Lu\}",

year = "1997",

language = "英语",

volume = "46",

pages = "1455--1456",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

number = "7",

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TY - JOUR

T1 - Microstructure and physical properties of SrBi2Ta2O9 ferroelectric thin films

AU - Yang, Ping Xiong

AU - Deng, Hong Mei

AU - Zheng, Li Rong

AU - Lin, Cheng Lu

PY - 1997

Y1 - 1997

N2 - High quality SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates were obtained using pulsed laser deposition combined with annealing at 700°C in oxygen. The high diffraction peak of(008) and (115) was characterized by X-ray diffractometer. Good ferroelectric properties were obtained from the thin films; the remnant polarization and coercive field were about 10 μC/cm2 and 57 kV/cm, respectively. No fatigue was observed at up to 1010 switching cycles. Leakage current and the dc breakdown field measurement were about 4 × 10-8 A/cm2 at 5 V and 250 kV/cm, respectively.

AB - High quality SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates were obtained using pulsed laser deposition combined with annealing at 700°C in oxygen. The high diffraction peak of(008) and (115) was characterized by X-ray diffractometer. Good ferroelectric properties were obtained from the thin films; the remnant polarization and coercive field were about 10 μC/cm2 and 57 kV/cm, respectively. No fatigue was observed at up to 1010 switching cycles. Leakage current and the dc breakdown field measurement were about 4 × 10-8 A/cm2 at 5 V and 250 kV/cm, respectively.

UR - https://www.scopus.com/pages/publications/0346477668

M3 - 文章

AN - SCOPUS:0346477668

SN - 1000-3290

VL - 46

SP - 1455

EP - 1456

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 7

ER -

Microstructure and physical properties of SrBi2Ta2O9 ferroelectric thin films

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Microstructure and physical properties of SrBi₂Ta₂O₉ ferroelectric thin films