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Microstructure and electrical properties of PMNT thin films prepared by a modified sol-gel process

  • Aiyun Liu*
  • , Hailong Han
  • , Linlin Wei
  • , Peng Wang
  • , Fangting Lin
  • , Wangzhou Shi
  • , Xiangjian Meng
  • , Jinglan Sun
  • , Junhao Chu
  • , Chengbin Jing
  • *此作品的通讯作者
  • Shanghai Normal University
  • CAS - Shanghai Institute of Technical Physics

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMNT) thin films were prepared on (111)Pt/Ti/SiO2/Si substrate by a modified sol-gel process with Nb2O5 as the niobium source. XRD analysis shows that PMNT thin films with pure perovskite were obtained by spin-coating and annealing at 700°C for 20 minutes. The remanent polarization and coercive field of the PMNT thin films are about 7.69μC/cm2 and 80.75kV/cm, respectively. The dielectric and C-V curve of PMNT thin films are also investigated. The dielectric constant (εr) reaches 935 and the dissipation factor (tanδ)is about 0.04 at 1kHz.

源语言英语
主期刊名Eighth International Conference on Thin Film Physics and Applications
DOI
出版状态已出版 - 2013
活动8th International Conference on Thin Film Physics and Applications, TFPA 2013 - Shanghai, 中国
期限: 20 9月 201323 9月 2013

出版系列

姓名Proceedings of SPIE - The International Society for Optical Engineering
9068
ISSN(印刷版)0277-786X
ISSN(电子版)1996-756X

会议

会议8th International Conference on Thin Film Physics and Applications, TFPA 2013
国家/地区中国
Shanghai
时期20/09/1323/09/13

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