@inproceedings{3e790ca3a2da4c5ebbf7e584e9198f59,
title = "Microstructural Evolution and Reliability Analysis of RDL Copper Interconnects under High-Temperature Conditions",
abstract = "In this work, we conduct an in situ thermal experiment focused on redistribution layers (RDLs) copper interconnect structures in integrated circuits (ICs), utilizing advanced characterization techniques such as focused ion beam (FIB) and transmission electron microscopy (TEM). The experiment reveals the formation of dislocations and void defects within the copper during heating, indicating underlying microstructural failure mechanisms induced by thermal stress. These findings highlight critical reliability concerns associated with copper interconnects under high-temperature conditions in IC applications, providing valuable insights for the design of advanced packaging.",
keywords = "FIB, defects, in situ TEM, interconnect, reliability",
author = "Peng Xu and Lan Li and Jialu Huang and Yu Yao and Hengchang Bi and Jiang Xia and Zongyi Li and Zuoyuan Dong and Xing Wu",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 2025 IEEE 16th International Conference on ASIC, ASICON 2025 ; Conference date: 21-10-2025 Through 24-10-2025",
year = "2025",
doi = "10.1109/ASICON66040.2025.11325926",
language = "英语",
series = "Proceedings of International Conference on ASIC",
publisher = "IEEE Computer Society",
booktitle = "2025 IEEE 16th International Conference on ASIC, ASICON 2025",
address = "美国",
}