@inproceedings{8ea8fde9ff254e34bd08a3896c8e8dcb,
title = "Microstructural characterization of Bi2Te3 thin films prepared by hot wall epitaxy",
abstract = "The influence of growth conditions on the microstructures of Bi 2Te3 films grown on (111) and (100)-oriented GaAs substrates by hot wall epitaxy is investigated using X-ray diffraction, scan electron microscopy, energy dispersive spectrum, high resolution transmission electron microscopy and micro-Raman spectroscopy. It is found that high quality Bi2Te3 thin films with c-axis oriented are prepared when the temperatures of the Bi2Te3 source and (111) GaAs substrate are 505°C and 375°C respectively. The low substrate temperature and the crystal symmetry mismatch between the (100) GaAs substrate and Bi2Te3 epitaxial film make the crystalline grains mis-oriented, which are responsible for the degradation of the crystal quality of Bi2Te3 films. In addition, the low substrate temperature could lead to the non-stoichiometry.",
keywords = "BiTe film, Hot wall epitaxy, Microstructure",
author = "Jianhua Guo and Huiyong Deng and Gujin Hu and Xiaonan Li and Guolin Yu and Ning Dai",
year = "2013",
doi = "10.1117/12.2054129",
language = "英语",
isbn = "9780819499974",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Eighth International Conference on Thin Film Physics and Applications",
note = "8th International Conference on Thin Film Physics and Applications, TFPA 2013 ; Conference date: 20-09-2013 Through 23-09-2013",
}