TY - GEN
T1 - Microscopic study on the carrier distribution in optoelectronic device structures
T2 - Optoelectronic Materials and Devices VI
AU - Huang, Wenchao
AU - Xia, Hui
AU - Wang, Shaowei
AU - Deng, Honghai
AU - Wei, Peng
AU - Li, Lu
AU - Liu, Fengqi
AU - Li, Zhifeng
AU - Li, Tianxin
PY - 2011
Y1 - 2011
N2 - Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM 1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (<10 nm) in electrical characterization 3 that is demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission 4,5, we developed a numerical model for the tip-sample Schottky contact 4. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).
AB - Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM 1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (<10 nm) in electrical characterization 3 that is demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission 4,5, we developed a numerical model for the tip-sample Schottky contact 4. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).
KW - Carrier distribution
KW - Photodetector
KW - Quantum wells
KW - Scanning capacitance microscopy
KW - Scanning spreading resistance microscopy
KW - Slective-area diffusion
UR - https://www.scopus.com/pages/publications/84862973830
U2 - 10.1117/12.904389
DO - 10.1117/12.904389
M3 - 会议稿件
AN - SCOPUS:84862973830
SN - 9780819489562
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Optoelectronic Materials and Devices VI
Y2 - 13 November 2011 through 16 November 2011
ER -