TY - JOUR
T1 - Metastable group II sulphides grown by MBE
T2 - Surface morphology and crystal structure
AU - Prior, K. A.
AU - Bradford, C.
AU - David, L.
AU - Tang, X.
AU - Cavenett, B. C.
PY - 2005/2/15
Y1 - 2005/2/15
N2 - Many group II sulphides semiconductors have the rocksalt structure as their stable crystal structure. In the case of MgS and MnS, it has been demonstrated that these compounds can be grown in the metastable zinc-blende structure using a simple MBE growth procedure that can increase the thickness of these metastable layers to over 130 nm. In this paper, we review the growth method and features which arise during the growth of both MgS and MnS, namely the development parallel surface ridges and the loss of the zinc-blende crystal structure.
AB - Many group II sulphides semiconductors have the rocksalt structure as their stable crystal structure. In the case of MgS and MnS, it has been demonstrated that these compounds can be grown in the metastable zinc-blende structure using a simple MBE growth procedure that can increase the thickness of these metastable layers to over 130 nm. In this paper, we review the growth method and features which arise during the growth of both MgS and MnS, namely the development parallel surface ridges and the loss of the zinc-blende crystal structure.
KW - A1. Low-dimensional structures
KW - A3. Molecular beam epitaxy
KW - B1. Sulfides
KW - B2. Semiconducting II-VI materials
UR - https://www.scopus.com/pages/publications/15944426352
U2 - 10.1016/j.jcrysgro.2004.10.078
DO - 10.1016/j.jcrysgro.2004.10.078
M3 - 会议文章
AN - SCOPUS:15944426352
SN - 0022-0248
VL - 275
SP - 141
EP - 149
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-2
ER -