Memory properties of metal-ferroelectric-semiconductor structure

Z. Ma; X. Meng; J. Chu

doi:10.1080/00150190108008464

Memory properties of metal-ferroelectric-semiconductor structure

Z. Ma^*
, X. Meng
, J. Chu

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 会议文章 › 同行评审

摘要

Crack-free lead zirconic titanate (PZT) film was grown on p-Si substrate by sol-gel technique. The capacitance-voltage characteristics of Pt/PZT/p-Si structure were measured and their hysteresis loops were observed at different temperatures and frequencies. We consider that the conduction peak in Conductance-Voltage characteristic is due to formation of reverse layer, rather than the leakage current from semiconductor to ferroelectrics.

源语言	英语
页（从-至）	239-245
页数	7
期刊	Ferroelectrics
卷	253
期	1-4
DOI	https://doi.org/10.1080/00150190108008464
出版状态	已出版 - 2001
已对外发布	是
活动	6th International Symposium on Ferroic Domains and Mesoscopic Structures (ISFD-6) - Nanjing, 中国期限: 29 5月 2000 → 2 6月 2000

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title = "Memory properties of metal-ferroelectric-semiconductor structure",

abstract = "Crack-free lead zirconic titanate (PZT) film was grown on p-Si substrate by sol-gel technique. The capacitance-voltage characteristics of Pt/PZT/p-Si structure were measured and their hysteresis loops were observed at different temperatures and frequencies. We consider that the conduction peak in Conductance-Voltage characteristic is due to formation of reverse layer, rather than the leakage current from semiconductor to ferroelectrics.",

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author = "Z. Ma and X. Meng and J. Chu",

year = "2001",

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T1 - Memory properties of metal-ferroelectric-semiconductor structure

AU - Ma, Z.

AU - Meng, X.

AU - Chu, J.

PY - 2001

Y1 - 2001

N2 - Crack-free lead zirconic titanate (PZT) film was grown on p-Si substrate by sol-gel technique. The capacitance-voltage characteristics of Pt/PZT/p-Si structure were measured and their hysteresis loops were observed at different temperatures and frequencies. We consider that the conduction peak in Conductance-Voltage characteristic is due to formation of reverse layer, rather than the leakage current from semiconductor to ferroelectrics.

AB - Crack-free lead zirconic titanate (PZT) film was grown on p-Si substrate by sol-gel technique. The capacitance-voltage characteristics of Pt/PZT/p-Si structure were measured and their hysteresis loops were observed at different temperatures and frequencies. We consider that the conduction peak in Conductance-Voltage characteristic is due to formation of reverse layer, rather than the leakage current from semiconductor to ferroelectrics.

KW - C-V characteristic

KW - Ferroelectric

UR - https://www.scopus.com/pages/publications/0034875393

U2 - 10.1080/00150190108008464

DO - 10.1080/00150190108008464

M3 - 会议文章

AN - SCOPUS:0034875393

SN - 0015-0193

VL - 253

SP - 239

EP - 245

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1-4

T2 - 6th International Symposium on Ferroic Domains and Mesoscopic Structures (ISFD-6)

Y2 - 29 May 2000 through 2 June 2000

ER -

Memory properties of metal-ferroelectric-semiconductor structure

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