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Mechanisms of Graphene Chemical Vapor Deposition (CVD) Growth

  • Xiuyun Zhang*
  • , Qinghong Yuan
  • , Haibo Shu
  • , Feng Ding
  • *此作品的通讯作者
  • Hong Kong Polytechnic University

科研成果: 书/报告/会议事项章节章节同行评审

摘要

Graphene chemical vapor deposition (CVD) growth is the most studied method for graphene synthesis. It has the advantages of synthesizing very large area graphene, easy to controlling the number of layers and easy for transfer from the catalyst surface to the desired substrates. But the quality of graphene CVD samples is still not as good as those made by the mechanical peeling method. So, improving the quality of CVD synthesized graphene is the primary objective of study. To achieve this requires careful experimental design with the guidance of detailed and insightful mechanism of growth. Although a great number of experimental and theoretical efforts have been dedicated to the understanding of graphene CVD growth, our knowledge is far from sufficient to guide the experimental design. So, here we plan to briefly present the recent status of graphene CVD growth, especially the theoretical understanding on the mechanism in this chapter.

源语言英语
主期刊名Graphene Chemistry
主期刊副标题Theoretical Perspectives
出版商wiley
255-290
页数36
ISBN(电子版)9781118691281
ISBN(印刷版)9781119942122
DOI
出版状态已出版 - 9 8月 2013
已对外发布

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