摘要
The electronic structures of cesium carbonate (Cs2 CO 3) doped 4,7-diphenyl-1,10-phenanthroline (BPhen) films with various doping concentration are characterized by in situ ultraviolet and x-ray photoelectron spectroscopies, in an attempt to understand the mechanism of electron-transport enhancement in Cs2 CO3 -doped organic electron-transport layer for organic optoelectronic devices. The n-type electrical doping effect is evidenced by the Fermi level shift in the Cs 2 CO3 -doped BPhen films toward unoccupied molecular states with increasing doping concentration, leading to increase in electron concentration in the electron-transport layer and reduction in electron injection barrier height. These findings originate from energetically favorable electron transfer from Cs2 CO3 to BPhen.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 113304 |
| 期刊 | Applied Physics Letters |
| 卷 | 98 |
| 期 | 11 |
| DOI | |
| 出版状态 | 已出版 - 14 3月 2011 |
| 已对外发布 | 是 |
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