Measurement of electrical activation energy in boron-doped diamond using the flatband capacitance method

A Schottky barrier structure is fabricated on boron-doped diamond film, which is deposited on a (100) silicon substrate using the microwave enhanced chemical vapor deposition method. After optimizing experimental conditions, the flatband capacitance is measured for the Schottky barrier structure in the temperature range of 307-451 K. An electrical activation energy of about 362.4 ± 15.1 meV is obtained from the experimental data in the temperature range of 373-451 K. which is attributed to boron acceptors in the diamond film. The studies indicate that the flatband capacitance measurement is a feasible and useful tool in the electrical activation energy investigations of wide-gap semiconductors, because the ohmic contact problem inherent to these kinds of semiconductors can be avoided.