摘要
Dimensionality crossover can bring about distinct functionalities in solid materials. Here, the manipulation of magnetism and Hall effects in atomic-scale oxide superlattices of SrRuO3/LaFeO3 by harnessing the dimensionality effect in conjunction with the interfacial Dzyaloshinskii-Moriya interaction is demonstrated. As the electronic system approaches the thickness-driven magnetic transition and the concurrent metal-to-insulator transition, the drastic change in electronic band structure induces an unexpected sign reversal of the ordinary Hall coefficient at low temperature along with a distinct temperature dependence of the anomalous Hall resistivity. This carrier-type inversion can also be controlled by fine tuning of the interlayer exchange interaction between neighboring SrRuO3 layers, attesting to the crucial role of dimensionality. Moreover, topological Hall effects have been uncovered for a narrow thickness window of SrRuO3, which is attributed to the inherent Dzyaloshinskii-Moriya interaction at the G-type antiferromagnetic/ferromagnetic interface with minimal structural modification. Such topological Hall effect vanishes as the LaFeO3 layer is thinned to a single monolayer, confirming its intimate correlation with the antiferromagnetism of LaFeO3. Our results illustrate the effective control of magnetic and electronic properties in artificial oxide crystals via atomically precise synthesis.
| 源语言 | 英语 |
|---|---|
| 期刊 | Advanced Functional Materials |
| DOI | |
| 出版状态 | 已接受/待刊 - 2026 |
指纹
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