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Magnetotransport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures under illumination

  • Ning Tang*
  • , Bo Shen
  • , Kui Han
  • , Zhi Jian Yang
  • , Zhi Xin Qin
  • , Guo Yi Zhang
  • , Tie Lin
  • , Wen Zheng Zhou
  • , Li Yan Shang
  • , Jun Hao Chu
  • *此作品的通讯作者
  • Peking University
  • CAS - Shanghai Institute of Technical Physics

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

Magnetotransport properties of the two-dimensional electron gas (2DEG) in the triangular quantum well at AlxGa1-xN/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov-de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the 2DEG concentration increases and the SdH oscillation amplitudes are enhanced when there is no additional subband occupation. As the second subband becomes to be populated, the electron mobility decreases for the intersubband scattering and the 2DEG concentration of the first subband deceases. We suggest that the illumination decreases the electric field and weakens the quantum confinement of the triangular quantum well at AlxGa1-xN/GaN heterointerfaces.

源语言英语
主期刊名ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
页1122-1125
页数4
DOI
出版状态已出版 - 2008
已对外发布是
活动2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, 中国
期限: 20 10月 2008 → 23 10月 2008

丛书

姓名International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

会议

会议2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
国家/地区中国
市Beijing
时期20/10/08 → 23/10/08

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