Magnetotransport properties of (In,Zn)As/InAs p-n junctions

K. H. Gao; Q. W. Wang; G. Yu; T. Lin; H. Y. Deng; N. Dai; J. H. Chu

doi:10.1063/1.3576922

Magnetotransport properties of (In,Zn)As/InAs p-n junctions

K. H. Gao
, Q. W. Wang
, G. Yu
, T. Lin
, H. Y. Deng
, N. Dai
, J. H. Chu

物理与电子科学学院

East China Normal University
CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

We study the magnetotransport properties of nonmagnetic (In,Zn)As/InAs p-n junctions prepared by liquid phase epitaxy. The junctions show a clear rectifying behavior. A relatively large positive magnetoresistance is observed and its maximum value is greater than 140% at 12 K and gets to 38% at 292 K when a small magnetic field of 1.38 T is applied, which is not related to the series resistance. We attribute the observed magnetoresistance to the impurity-assisted tunneling mechanism.

源语言	英语
文章编号	142110
期刊	Applied Physics Letters
卷	98
期	14
DOI	https://doi.org/10.1063/1.3576922
出版状态	已出版 - 4 4月 2011

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abstract = "We study the magnetotransport properties of nonmagnetic (In,Zn)As/InAs p-n junctions prepared by liquid phase epitaxy. The junctions show a clear rectifying behavior. A relatively large positive magnetoresistance is observed and its maximum value is greater than 140\% at 12 K and gets to 38\% at 292 K when a small magnetic field of 1.38 T is applied, which is not related to the series resistance. We attribute the observed magnetoresistance to the impurity-assisted tunneling mechanism.",

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AU - Gao, K. H.

AU - Wang, Q. W.

AU - Yu, G.

AU - Lin, T.

AU - Deng, H. Y.

AU - Dai, N.

AU - Chu, J. H.

PY - 2011/4/4

Y1 - 2011/4/4

N2 - We study the magnetotransport properties of nonmagnetic (In,Zn)As/InAs p-n junctions prepared by liquid phase epitaxy. The junctions show a clear rectifying behavior. A relatively large positive magnetoresistance is observed and its maximum value is greater than 140% at 12 K and gets to 38% at 292 K when a small magnetic field of 1.38 T is applied, which is not related to the series resistance. We attribute the observed magnetoresistance to the impurity-assisted tunneling mechanism.

AB - We study the magnetotransport properties of nonmagnetic (In,Zn)As/InAs p-n junctions prepared by liquid phase epitaxy. The junctions show a clear rectifying behavior. A relatively large positive magnetoresistance is observed and its maximum value is greater than 140% at 12 K and gets to 38% at 292 K when a small magnetic field of 1.38 T is applied, which is not related to the series resistance. We attribute the observed magnetoresistance to the impurity-assisted tunneling mechanism.

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Magnetotransport properties of (In,Zn)As/InAs p-n junctions

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