Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well

K. H. Gao; W. Z. Zhou; Y. M. Zhou; G. Yu; T. Lin; S. L. Guo; J. H. Chu; N. Dai; Y. Gu; Y. G. Zhang; D. G. Austing

doi:10.1063/1.3119664

Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well

K. H. Gao
, W. Z. Zhou
, Y. M. Zhou
, G. Yu^*
, T. Lin
, S. L. Guo
, J. H. Chu
, N. Dai
, Y. Gu
, Y. G. Zhang
, D. G. Austing

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics
CAS - Shanghai Institute of Microsystem and Information Technology
National Research Council of Canada

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

We study the magnetoresistance of a high-density two-dimensional electron gas confined in an InAlAs/InGaAs quantum well and observe a parabolic negative magnetoresistivity at moderate field. This negative magnetoresistivity is induced by electron-electron interactions. The interaction correction to the Drude conductance is extracted from the negative magnetoresistivity. However, due to inhomogeneity in the electron density, there is a contribution of positive magnetoresistivity, which induces the larger extracted correction than anticipated.

源语言	英语
文章编号	152107
期刊	Applied Physics Letters
卷	94
期	15
DOI	https://doi.org/10.1063/1.3119664
出版状态	已出版 - 2009
已对外发布	是

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title = "Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well",

abstract = "We study the magnetoresistance of a high-density two-dimensional electron gas confined in an InAlAs/InGaAs quantum well and observe a parabolic negative magnetoresistivity at moderate field. This negative magnetoresistivity is induced by electron-electron interactions. The interaction correction to the Drude conductance is extracted from the negative magnetoresistivity. However, due to inhomogeneity in the electron density, there is a contribution of positive magnetoresistivity, which induces the larger extracted correction than anticipated.",

author = "Gao, \{K. H.\} and Zhou, \{W. Z.\} and Zhou, \{Y. M.\} and G. Yu and T. Lin and Guo, \{S. L.\} and Chu, \{J. H.\} and N. Dai and Y. Gu and Zhang, \{Y. G.\} and Austing, \{D. G.\}",

year = "2009",

doi = "10.1063/1.3119664",

language = "英语",

volume = "94",

journal = "Applied Physics Letters",

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T1 - Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well

AU - Gao, K. H.

AU - Zhou, W. Z.

AU - Zhou, Y. M.

AU - Yu, G.

AU - Lin, T.

AU - Guo, S. L.

AU - Chu, J. H.

AU - Dai, N.

AU - Gu, Y.

AU - Zhang, Y. G.

AU - Austing, D. G.

PY - 2009

Y1 - 2009

N2 - We study the magnetoresistance of a high-density two-dimensional electron gas confined in an InAlAs/InGaAs quantum well and observe a parabolic negative magnetoresistivity at moderate field. This negative magnetoresistivity is induced by electron-electron interactions. The interaction correction to the Drude conductance is extracted from the negative magnetoresistivity. However, due to inhomogeneity in the electron density, there is a contribution of positive magnetoresistivity, which induces the larger extracted correction than anticipated.

AB - We study the magnetoresistance of a high-density two-dimensional electron gas confined in an InAlAs/InGaAs quantum well and observe a parabolic negative magnetoresistivity at moderate field. This negative magnetoresistivity is induced by electron-electron interactions. The interaction correction to the Drude conductance is extracted from the negative magnetoresistivity. However, due to inhomogeneity in the electron density, there is a contribution of positive magnetoresistivity, which induces the larger extracted correction than anticipated.

UR - https://www.scopus.com/pages/publications/65249083326

U2 - 10.1063/1.3119664

DO - 10.1063/1.3119664

M3 - 文章

AN - SCOPUS:65249083326

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152107

ER -

Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well

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