Magneto-tunneling effect in weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure

Yuan Ming Zhou; Guo Lin Yu; Kuang Hong Gao; Tie Lin; Shao Ling Guo; Jun Hao Chu; Ning Dai

Magneto-tunneling effect in weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure

Yuan Ming Zhou
, Guo Lin Yu^*
, Kuang Hong Gao
, Tie Lin
, Shao Ling Guo
, Jun Hao Chu
, Ning Dai

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

We report on the magnetic tunneling properties of weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure at low temperature (1.5 K) in a magnetic field applied parallel to the tunneling current. The device is in resonance at zero bias voltage. From an analysis of the oscillations in magneto-conductivity for different bias voltages, the change in ground-state energy levels in two quantum wells with the bias can be confirmed and thus the tunneling mechanism was studied. The results reported in this paper provide the basis for the successful fabrication of weakly coupled double quantum dot system.

源语言	英语
页（从-至）	4221-4225
页数	5
期刊	Wuli Xuebao/Acta Physica Sinica
卷	59
期	6
出版状态	已出版 - 6月 2010
已对外发布	是

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title = "Magneto-tunneling effect in weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure",

abstract = "We report on the magnetic tunneling properties of weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure at low temperature (1.5 K) in a magnetic field applied parallel to the tunneling current. The device is in resonance at zero bias voltage. From an analysis of the oscillations in magneto-conductivity for different bias voltages, the change in ground-state energy levels in two quantum wells with the bias can be confirmed and thus the tunneling mechanism was studied. The results reported in this paper provide the basis for the successful fabrication of weakly coupled double quantum dot system.",

keywords = "Double quantum well, Oscillations in magneto-conductivity, Tunneling structure",

author = "Zhou, \{Yuan Ming\} and Yu, \{Guo Lin\} and Gao, \{Kuang Hong\} and Tie Lin and Guo, \{Shao Ling\} and Chu, \{Jun Hao\} and Ning Dai",

year = "2010",

month = jun,

language = "英语",

volume = "59",

pages = "4221--4225",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

number = "6",

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TY - JOUR

T1 - Magneto-tunneling effect in weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure

AU - Zhou, Yuan Ming

AU - Yu, Guo Lin

AU - Gao, Kuang Hong

AU - Lin, Tie

AU - Guo, Shao Ling

AU - Chu, Jun Hao

AU - Dai, Ning

PY - 2010/6

Y1 - 2010/6

N2 - We report on the magnetic tunneling properties of weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure at low temperature (1.5 K) in a magnetic field applied parallel to the tunneling current. The device is in resonance at zero bias voltage. From an analysis of the oscillations in magneto-conductivity for different bias voltages, the change in ground-state energy levels in two quantum wells with the bias can be confirmed and thus the tunneling mechanism was studied. The results reported in this paper provide the basis for the successful fabrication of weakly coupled double quantum dot system.

AB - We report on the magnetic tunneling properties of weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure at low temperature (1.5 K) in a magnetic field applied parallel to the tunneling current. The device is in resonance at zero bias voltage. From an analysis of the oscillations in magneto-conductivity for different bias voltages, the change in ground-state energy levels in two quantum wells with the bias can be confirmed and thus the tunneling mechanism was studied. The results reported in this paper provide the basis for the successful fabrication of weakly coupled double quantum dot system.

KW - Double quantum well

KW - Oscillations in magneto-conductivity

KW - Tunneling structure

UR - https://www.scopus.com/pages/publications/77954003122

M3 - 文章

AN - SCOPUS:77954003122

SN - 1000-3290

VL - 59

SP - 4221

EP - 4225

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 6

ER -

Magneto-tunneling effect in weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure

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