Magneto-transport characterization of MBE-grown Hg_1-xCd_xTe

A hybrid conduction analysis method mixed with multi-carrier fitting procedure and mobility spectrum is present to analyze the experimental Hall and resistivity data of MBE grown Hg_1-xCd_xTe samples as a function of magnetic field. This method enables the conductivity contribution of bulk electron to separated from that of interface electron. Applications to temperature-dependent Hall and resistivity data confirm that the procedure may be regarded accurate and reliable one. The method seems to be a suitable tool for the routine electrical characterization of semiconductor materials and devices.