Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAIAs/lnGaAs single quantum well

Magneto-transport measurements have been carried out on a Si heavily δ-doped In_0.52Al_0.48As/In _0.53Ga_0.47As single quantum well in the temperature range between 1.5 and 60 K under magnetic field up to 10 T. We studied the Shubnikov-de Haas(SdH) effect and the Hall effect for the In_0.52Al_0.48As/In _0.53Ga_0.47As single quantum well occupied by two subbands, and have obtained the electron concentration, mobility, effective mass and energy levels respectively. The electron concentrations of the two subbands derived from mobility spectrum combined with multi-carrier fitting analysis are well consistent with the result from the SdH oscillation. From fast Fourier transform analysis for d²ρ/dB²-1/B, it is observed that there is a frequency of f₁-f₂ insensitive to the temperature, besides the frequencies f₁, f₂ for the two subbands and the frequency doubling 2f₁, both are dependent on the temperature. This is because that the electrons occupying the two different subbands almost have the same effective mass in the quantum well and the magneto-intersubband scattering between the two subbands is strong.