Magnetism induced by boron impurities in amorphous silicon

Y. Zhu; C. L. Du; D. N. Shi; K. C. Zhang; C. L. Ma; S. J. Gong; Z. Q. Yang

doi:10.1063/1.3565051

Magnetism induced by boron impurities in amorphous silicon

Y. Zhu^*
, C. L. Du
, D. N. Shi
, K. C. Zhang
, C. L. Ma
, S. J. Gong
, Z. Q. Yang

^*此作品的通讯作者

物理与电子科学学院

Nanjing University of Aeronautics and Astronautics
Bohai University
Suzhou University of Science and Technology
Fudan University

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

With first-principles calculations, magnetism is found in amorphous silicon doped with B impurities. The maximum magnetic moment per impurity atom is predicted to be ∼1.0 _B which originates mostly from unsaturated bond around three-fold coordinated Si atoms. Stoner criterion is employed to account for the magnetism induced by p-type impurities. The obtained spin polarized energies are around 50 meV, indicating that the magnetism found in amorphous silicon is able to survive even at room temperature.

源语言	英语
文章编号	073913
期刊	Journal of Applied Physics
卷	109
期	7
DOI	https://doi.org/10.1063/1.3565051
出版状态	已出版 - 1 4月 2011

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AU - Du, C. L.

AU - Shi, D. N.

AU - Zhang, K. C.

AU - Ma, C. L.

AU - Gong, S. J.

AU - Yang, Z. Q.

PY - 2011/4/1

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N2 - With first-principles calculations, magnetism is found in amorphous silicon doped with B impurities. The maximum magnetic moment per impurity atom is predicted to be ∼1.0 B which originates mostly from unsaturated bond around three-fold coordinated Si atoms. Stoner criterion is employed to account for the magnetism induced by p-type impurities. The obtained spin polarized energies are around 50 meV, indicating that the magnetism found in amorphous silicon is able to survive even at room temperature.

AB - With first-principles calculations, magnetism is found in amorphous silicon doped with B impurities. The maximum magnetic moment per impurity atom is predicted to be ∼1.0 B which originates mostly from unsaturated bond around three-fold coordinated Si atoms. Stoner criterion is employed to account for the magnetism induced by p-type impurities. The obtained spin polarized energies are around 50 meV, indicating that the magnetism found in amorphous silicon is able to survive even at room temperature.

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Magnetism induced by boron impurities in amorphous silicon

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