Magnetism control of FeGa/BTO thin films by Electric-field

B. Zhang; M. Yang; L. Liu; Q. Zhan; K. Wang

doi:10.1109/INTMAG.2015.7157356

Magnetism control of FeGa/BTO thin films by Electric-field

B. Zhang
, M. Yang
, L. Liu
, Q. Zhan
, K. Wang

CAS - Institute of Semiconductors
CAS - Ningbo Institute of Material Technology and Engineering

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

Controlling the magnetism by means of electric fields is a key issue for the future development of low-power spintronics¹. Usually, electric-field can control the magnetic materials by oxide-gate structures². But this approach has a low regulatory capacity drawback than a way of controlled on BaTiO₃ (BTO) by the magnetoelectricity coupling, such as the experiments of FeRh/BaTiO₃³, BaTiO₃/La_0.67Sr_0.33MnO⁴ and Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃/Co₄₀Fe₄₀B₂₀⁵. FeGa alloy and BTO oxide are laminated to form heterostructure for high magnetoelectricity⁶. Ga could contribute to preferential magnetization along the <100> direction in FeGa alloys and thus create anisotropy in the material, which is higher than the pure Fe⁷. Here we report the magnetic control of FeGa thin films on BaTiO substrate by electric field.

源语言	英语
主期刊名	2015 IEEE International Magnetics Conference, INTERMAG 2015
出版商	Institute of Electrical and Electronics Engineers Inc.
ISBN（电子版）	9781479973224
DOI	https://doi.org/10.1109/INTMAG.2015.7157356
出版状态	已出版 - 14 7月 2015
已对外发布	是
活动	2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, 中国期限: 11 5月 2015 → 15 5月 2015

出版系列

姓名	2015 IEEE International Magnetics Conference, INTERMAG 2015

会议

会议	2015 IEEE International Magnetics Conference, INTERMAG 2015
国家/地区	中国
市	Beijing
时期	11/05/15 → 15/05/15

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10.1109/INTMAG.2015.7157356

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引用此

@inproceedings{21a6c37e53b741c0bc691ca8a0e4c1e9,

title = "Magnetism control of FeGa/BTO thin films by Electric-field",

abstract = "Controlling the magnetism by means of electric fields is a key issue for the future development of low-power spintronics1. Usually, electric-field can control the magnetic materials by oxide-gate structures2. But this approach has a low regulatory capacity drawback than a way of controlled on BaTiO3 (BTO) by the magnetoelectricity coupling, such as the experiments of FeRh/BaTiO33, BaTiO3/La0.67Sr0.33MnO4 and Pb(Mg1/3Nb2/3)0.7Ti0.3O3/Co40Fe40B205. FeGa alloy and BTO oxide are laminated to form heterostructure for high magnetoelectricity6. Ga could contribute to preferential magnetization along the <100> direction in FeGa alloys and thus create anisotropy in the material, which is higher than the pure Fe7. Here we report the magnetic control of FeGa thin films on BaTiO substrate by electric field.",

author = "B. Zhang and M. Yang and L. Liu and Q. Zhan and K. Wang",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 IEEE International Magnetics Conference, INTERMAG 2015 ; Conference date: 11-05-2015 Through 15-05-2015",

year = "2015",

month = jul,

day = "14",

doi = "10.1109/INTMAG.2015.7157356",

language = "英语",

series = "2015 IEEE International Magnetics Conference, INTERMAG 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE International Magnetics Conference, INTERMAG 2015",

address = "美国",

}

Zhang, B, Yang, M, Liu, L, Zhan, Q & Wang, K 2015, Magnetism control of FeGa/BTO thin films by Electric-field. 在 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7157356, 2015 IEEE International Magnetics Conference, INTERMAG 2015, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE International Magnetics Conference, INTERMAG 2015, Beijing, 中国, 11/05/15. https://doi.org/10.1109/INTMAG.2015.7157356

TY - GEN

T1 - Magnetism control of FeGa/BTO thin films by Electric-field

AU - Zhang, B.

AU - Yang, M.

AU - Liu, L.

AU - Zhan, Q.

AU - Wang, K.

PY - 2015/7/14

Y1 - 2015/7/14

N2 - Controlling the magnetism by means of electric fields is a key issue for the future development of low-power spintronics1. Usually, electric-field can control the magnetic materials by oxide-gate structures2. But this approach has a low regulatory capacity drawback than a way of controlled on BaTiO3 (BTO) by the magnetoelectricity coupling, such as the experiments of FeRh/BaTiO33, BaTiO3/La0.67Sr0.33MnO4 and Pb(Mg1/3Nb2/3)0.7Ti0.3O3/Co40Fe40B205. FeGa alloy and BTO oxide are laminated to form heterostructure for high magnetoelectricity6. Ga could contribute to preferential magnetization along the <100> direction in FeGa alloys and thus create anisotropy in the material, which is higher than the pure Fe7. Here we report the magnetic control of FeGa thin films on BaTiO substrate by electric field.

AB - Controlling the magnetism by means of electric fields is a key issue for the future development of low-power spintronics1. Usually, electric-field can control the magnetic materials by oxide-gate structures2. But this approach has a low regulatory capacity drawback than a way of controlled on BaTiO3 (BTO) by the magnetoelectricity coupling, such as the experiments of FeRh/BaTiO33, BaTiO3/La0.67Sr0.33MnO4 and Pb(Mg1/3Nb2/3)0.7Ti0.3O3/Co40Fe40B205. FeGa alloy and BTO oxide are laminated to form heterostructure for high magnetoelectricity6. Ga could contribute to preferential magnetization along the <100> direction in FeGa alloys and thus create anisotropy in the material, which is higher than the pure Fe7. Here we report the magnetic control of FeGa thin films on BaTiO substrate by electric field.

UR - https://www.scopus.com/pages/publications/84942446784

U2 - 10.1109/INTMAG.2015.7157356

DO - 10.1109/INTMAG.2015.7157356

M3 - 会议稿件

AN - SCOPUS:84942446784

T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015

BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015

Y2 - 11 May 2015 through 15 May 2015

ER -

Magnetism control of FeGa/BTO thin films by Electric-field

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