Magnetic field modulated dielectric relaxation behavior of Pt/BiScO 3-PbTiO 3/La 0.7Sr 0.3MnO 3 heterostructure in metal-insulator transition region: An equivalent-circuit method

Junyu Zhu; Jing Yang; Wei Bai; Chungang Duan; Shuai Zhang; Genshui Wang; Xianlin Dong; Denis Remiens; Xiaodong Tang

doi:10.1063/1.3667289

Magnetic field modulated dielectric relaxation behavior of Pt/BiScO ₃-PbTiO ₃/La _0.7Sr _0.3MnO ₃ heterostructure in metal-insulator transition region: An equivalent-circuit method

Junyu Zhu
, Jing Yang^*
, Wei Bai
, Chungang Duan
, Shuai Zhang
, Genshui Wang
, Xianlin Dong
, Denis Remiens
, Xiaodong Tang

^*此作品的通讯作者

物理与电子科学学院

East China Normal University
CAS - Shanghai Institute of Ceramics
Université Polytechnique Hauts-de-France

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

Utilizing temperature and magnetic field dependent dielectric spectroscopy, two different dielectric relaxation processes, both accompanied with prominent positive magnetodielectric (MD) effects, were observed in Pt/BiScO ₃-PbTiO ₃/La _0.7Sr _0.3MnO ₃ (Pt/BSPT/LSMO) heterostructure. An equivalent circuit model is established to quantitatively describe the relaxation data well. The simulation results elucidated that one relaxation process can be attributed to magnetic order associated BSPT/LSMO interfacial relaxation with abnormal dynamics feature. Another one is due to the external contact interface contributions. Both relaxation dynamics can be tuned, via magnetic field controlled localization of free interfacial charges, to induce MD effects in BSPT/LSMO interfaces and nonmagnetic Pt/BSPT contacts.

源语言	英语
文章编号	114118
期刊	Journal of Applied Physics
卷	110
期	11
DOI	https://doi.org/10.1063/1.3667289
出版状态	已出版 - 1 12月 2011

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10.1063/1.3667289

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title = "Magnetic field modulated dielectric relaxation behavior of Pt/BiScO 3-PbTiO 3/La 0.7Sr 0.3MnO 3 heterostructure in metal-insulator transition region: An equivalent-circuit method",

abstract = "Utilizing temperature and magnetic field dependent dielectric spectroscopy, two different dielectric relaxation processes, both accompanied with prominent positive magnetodielectric (MD) effects, were observed in Pt/BiScO 3-PbTiO 3/La 0.7Sr 0.3MnO 3 (Pt/BSPT/LSMO) heterostructure. An equivalent circuit model is established to quantitatively describe the relaxation data well. The simulation results elucidated that one relaxation process can be attributed to magnetic order associated BSPT/LSMO interfacial relaxation with abnormal dynamics feature. Another one is due to the external contact interface contributions. Both relaxation dynamics can be tuned, via magnetic field controlled localization of free interfacial charges, to induce MD effects in BSPT/LSMO interfaces and nonmagnetic Pt/BSPT contacts.",

author = "Junyu Zhu and Jing Yang and Wei Bai and Chungang Duan and Shuai Zhang and Genshui Wang and Xianlin Dong and Denis Remiens and Xiaodong Tang",

year = "2011",

month = dec,

day = "1",

doi = "10.1063/1.3667289",

language = "英语",

volume = "110",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Magnetic field modulated dielectric relaxation behavior of Pt/BiScO 3-PbTiO 3/La 0.7Sr 0.3MnO 3 heterostructure in metal-insulator transition region

T2 - An equivalent-circuit method

AU - Zhu, Junyu

AU - Yang, Jing

AU - Bai, Wei

AU - Duan, Chungang

AU - Zhang, Shuai

AU - Wang, Genshui

AU - Dong, Xianlin

AU - Remiens, Denis

AU - Tang, Xiaodong

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Utilizing temperature and magnetic field dependent dielectric spectroscopy, two different dielectric relaxation processes, both accompanied with prominent positive magnetodielectric (MD) effects, were observed in Pt/BiScO 3-PbTiO 3/La 0.7Sr 0.3MnO 3 (Pt/BSPT/LSMO) heterostructure. An equivalent circuit model is established to quantitatively describe the relaxation data well. The simulation results elucidated that one relaxation process can be attributed to magnetic order associated BSPT/LSMO interfacial relaxation with abnormal dynamics feature. Another one is due to the external contact interface contributions. Both relaxation dynamics can be tuned, via magnetic field controlled localization of free interfacial charges, to induce MD effects in BSPT/LSMO interfaces and nonmagnetic Pt/BSPT contacts.

AB - Utilizing temperature and magnetic field dependent dielectric spectroscopy, two different dielectric relaxation processes, both accompanied with prominent positive magnetodielectric (MD) effects, were observed in Pt/BiScO 3-PbTiO 3/La 0.7Sr 0.3MnO 3 (Pt/BSPT/LSMO) heterostructure. An equivalent circuit model is established to quantitatively describe the relaxation data well. The simulation results elucidated that one relaxation process can be attributed to magnetic order associated BSPT/LSMO interfacial relaxation with abnormal dynamics feature. Another one is due to the external contact interface contributions. Both relaxation dynamics can be tuned, via magnetic field controlled localization of free interfacial charges, to induce MD effects in BSPT/LSMO interfaces and nonmagnetic Pt/BSPT contacts.

UR - https://www.scopus.com/pages/publications/84859334858

U2 - 10.1063/1.3667289

DO - 10.1063/1.3667289

M3 - 文章

AN - SCOPUS:84859334858

SN - 0021-8979

VL - 110

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 114118

ER -

Magnetic field modulated dielectric relaxation behavior of Pt/BiScO 3-PbTiO 3/La 0.7Sr 0.3MnO 3 heterostructure in metal-insulator transition region: An equivalent-circuit method

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Magnetic field modulated dielectric relaxation behavior of Pt/BiScO ₃-PbTiO ₃/La _0.7Sr _0.3MnO ₃ heterostructure in metal-insulator transition region: An equivalent-circuit method