Low temperature growth of manganese cobalt nickelate films by chemical deposition

Yujian Ge; Zhiming Huang; Yun Hou; Jianhuan Qin; Tianxin Li; Junhao Chu

doi:10.1016/j.tsf.2007.10.059

Low temperature growth of manganese cobalt nickelate films by chemical deposition

Yujian Ge^*
, Zhiming Huang
, Yun Hou
, Jianhuan Qin
, Tianxin Li
, Junhao Chu

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

12 引用（Scopus）

摘要

Manganese cobalt nickelate films (Mn_xCo_yNi_{3 - x - y})O₄ (MCN) were prepared by chemical deposition method at a crystallization temperature of 600 °C, which is lower than the usual sintering temperature of ∼ 1050-1200 °C. The grain size of the MCN films increased from 20 to 60 nm with the annealing temperature increased from 600 °C to 900 °C. The secondary ion mass spectroscopy (SIMS) shows that elements of Mn, Co, Ni in the films were distributed homogenuously and that the diffusion of Si at the interface was negligeable. The infrared optical constants of the MCN thin films were determined using infrared spectroscopic ellipsometry.

源语言	英语
页（从-至）	5931-5934
页数	4
期刊	Thin Solid Films
卷	516
期	18
DOI	https://doi.org/10.1016/j.tsf.2007.10.059
出版状态	已出版 - 31 7月 2008
已对外发布	是

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title = "Low temperature growth of manganese cobalt nickelate films by chemical deposition",

abstract = "Manganese cobalt nickelate films (MnxCoyNi3 - x - y)O4 (MCN) were prepared by chemical deposition method at a crystallization temperature of 600 °C, which is lower than the usual sintering temperature of ∼ 1050-1200 °C. The grain size of the MCN films increased from 20 to 60 nm with the annealing temperature increased from 600 °C to 900 °C. The secondary ion mass spectroscopy (SIMS) shows that elements of Mn, Co, Ni in the films were distributed homogenuously and that the diffusion of Si at the interface was negligeable. The infrared optical constants of the MCN thin films were determined using infrared spectroscopic ellipsometry.",

keywords = "Atomic force microscopy, Infrared spectroscopic ellipsometry, Manganese cobalt nickelate film, X-ray diffraction",

author = "Yujian Ge and Zhiming Huang and Yun Hou and Jianhuan Qin and Tianxin Li and Junhao Chu",

year = "2008",

month = jul,

day = "31",

doi = "10.1016/j.tsf.2007.10.059",

language = "英语",

volume = "516",

pages = "5931--5934",

journal = "Thin Solid Films",

issn = "0040-6090",

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TY - JOUR

T1 - Low temperature growth of manganese cobalt nickelate films by chemical deposition

AU - Ge, Yujian

AU - Huang, Zhiming

AU - Hou, Yun

AU - Qin, Jianhuan

AU - Li, Tianxin

AU - Chu, Junhao

PY - 2008/7/31

Y1 - 2008/7/31

N2 - Manganese cobalt nickelate films (MnxCoyNi3 - x - y)O4 (MCN) were prepared by chemical deposition method at a crystallization temperature of 600 °C, which is lower than the usual sintering temperature of ∼ 1050-1200 °C. The grain size of the MCN films increased from 20 to 60 nm with the annealing temperature increased from 600 °C to 900 °C. The secondary ion mass spectroscopy (SIMS) shows that elements of Mn, Co, Ni in the films were distributed homogenuously and that the diffusion of Si at the interface was negligeable. The infrared optical constants of the MCN thin films were determined using infrared spectroscopic ellipsometry.

AB - Manganese cobalt nickelate films (MnxCoyNi3 - x - y)O4 (MCN) were prepared by chemical deposition method at a crystallization temperature of 600 °C, which is lower than the usual sintering temperature of ∼ 1050-1200 °C. The grain size of the MCN films increased from 20 to 60 nm with the annealing temperature increased from 600 °C to 900 °C. The secondary ion mass spectroscopy (SIMS) shows that elements of Mn, Co, Ni in the films were distributed homogenuously and that the diffusion of Si at the interface was negligeable. The infrared optical constants of the MCN thin films were determined using infrared spectroscopic ellipsometry.

KW - Atomic force microscopy

KW - Infrared spectroscopic ellipsometry

KW - Manganese cobalt nickelate film

KW - X-ray diffraction

UR - https://www.scopus.com/pages/publications/44649110180

U2 - 10.1016/j.tsf.2007.10.059

DO - 10.1016/j.tsf.2007.10.059

M3 - 文章

AN - SCOPUS:44649110180

SN - 0040-6090

VL - 516

SP - 5931

EP - 5934

JO - Thin Solid Films

JF - Thin Solid Films

IS - 18

ER -

Low temperature growth of manganese cobalt nickelate films by chemical deposition

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