Low-temperature formation of nanocrystalline β-SiC with high surface area and mesoporosity via reaction of mesoporous carbon and silicon powder

Zhicheng Liu; Weihua Shen; Wenbo Bu; Hangrong Chen; Zile Hua; Lingxia Zhang; Lei Li; Jianlin Shi; Shouhong Tan

doi:10.1016/j.micromeso.2005.02.022

Low-temperature formation of nanocrystalline β-SiC with high surface area and mesoporosity via reaction of mesoporous carbon and silicon powder

Zhicheng Liu
, Weihua Shen
, Wenbo Bu
, Hangrong Chen
, Zile Hua
, Lingxia Zhang
, Lei Li
, Jianlin Shi^*
, Shouhong Tan

^*此作品的通讯作者

CAS - Shanghai Institute of Ceramics

科研成果: 期刊稿件 › 文章 › 同行评审

85 引用（Scopus）

摘要

We report here a new route to prepare nanocrystalline β-silicon carbide with high specific surface areas and mesoporosity. The preparation method was via the reaction of ordered mesoporous carbons (OMCs, carbon replicas of MCM-48, SBA-15 and KIT-6) with silicon powder at the temperature of 1200-1300 °C, which is below the melting point of silicon, 1420 °C. The SiC samples were characterized by XRD, SEM, TEM, N₂ adsorption and other techniques, which showed that the SiC samples were nanocrystalline and had a high surface area of up to 147 m² g^-1 and a mesoporosity in the range of 5-40 nm. In addition, the silicon vapor infiltration method at a temperature beyond 1420 °C was also brought into comparison.

源语言	英语
页（从-至）	137-145
页数	9
期刊	Microporous and Mesoporous Materials
卷	82
期	1-2
DOI	https://doi.org/10.1016/j.micromeso.2005.02.022
出版状态	已出版 - 5 7月 2005
已对外发布	是

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@article{ccfa896202894e8ea6ce798e0e07dda4,

title = "Low-temperature formation of nanocrystalline β-SiC with high surface area and mesoporosity via reaction of mesoporous carbon and silicon powder",

abstract = "We report here a new route to prepare nanocrystalline β-silicon carbide with high specific surface areas and mesoporosity. The preparation method was via the reaction of ordered mesoporous carbons (OMCs, carbon replicas of MCM-48, SBA-15 and KIT-6) with silicon powder at the temperature of 1200-1300 °C, which is below the melting point of silicon, 1420 °C. The SiC samples were characterized by XRD, SEM, TEM, N2 adsorption and other techniques, which showed that the SiC samples were nanocrystalline and had a high surface area of up to 147 m2 g-1 and a mesoporosity in the range of 5-40 nm. In addition, the silicon vapor infiltration method at a temperature beyond 1420 °C was also brought into comparison.",

keywords = "Low-temperature formation, Mesoporosity, Mesoporous carbon, Nanocrystalline, Si powder, β-SiC",

author = "Zhicheng Liu and Weihua Shen and Wenbo Bu and Hangrong Chen and Zile Hua and Lingxia Zhang and Lei Li and Jianlin Shi and Shouhong Tan",

year = "2005",

month = jul,

day = "5",

doi = "10.1016/j.micromeso.2005.02.022",

language = "英语",

volume = "82",

pages = "137--145",

journal = "Microporous and Mesoporous Materials",

issn = "1387-1811",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Low-temperature formation of nanocrystalline β-SiC with high surface area and mesoporosity via reaction of mesoporous carbon and silicon powder

AU - Liu, Zhicheng

AU - Shen, Weihua

AU - Bu, Wenbo

AU - Chen, Hangrong

AU - Hua, Zile

AU - Zhang, Lingxia

AU - Li, Lei

AU - Shi, Jianlin

AU - Tan, Shouhong

PY - 2005/7/5

Y1 - 2005/7/5

N2 - We report here a new route to prepare nanocrystalline β-silicon carbide with high specific surface areas and mesoporosity. The preparation method was via the reaction of ordered mesoporous carbons (OMCs, carbon replicas of MCM-48, SBA-15 and KIT-6) with silicon powder at the temperature of 1200-1300 °C, which is below the melting point of silicon, 1420 °C. The SiC samples were characterized by XRD, SEM, TEM, N2 adsorption and other techniques, which showed that the SiC samples were nanocrystalline and had a high surface area of up to 147 m2 g-1 and a mesoporosity in the range of 5-40 nm. In addition, the silicon vapor infiltration method at a temperature beyond 1420 °C was also brought into comparison.

AB - We report here a new route to prepare nanocrystalline β-silicon carbide with high specific surface areas and mesoporosity. The preparation method was via the reaction of ordered mesoporous carbons (OMCs, carbon replicas of MCM-48, SBA-15 and KIT-6) with silicon powder at the temperature of 1200-1300 °C, which is below the melting point of silicon, 1420 °C. The SiC samples were characterized by XRD, SEM, TEM, N2 adsorption and other techniques, which showed that the SiC samples were nanocrystalline and had a high surface area of up to 147 m2 g-1 and a mesoporosity in the range of 5-40 nm. In addition, the silicon vapor infiltration method at a temperature beyond 1420 °C was also brought into comparison.

KW - Low-temperature formation

KW - Mesoporosity

KW - Mesoporous carbon

KW - Nanocrystalline

KW - Si powder

KW - β-SiC

UR - https://www.scopus.com/pages/publications/20344394099

U2 - 10.1016/j.micromeso.2005.02.022

DO - 10.1016/j.micromeso.2005.02.022

M3 - 文章

AN - SCOPUS:20344394099

SN - 1387-1811

VL - 82

SP - 137

EP - 145

JO - Microporous and Mesoporous Materials

JF - Microporous and Mesoporous Materials

IS - 1-2

ER -

Low-temperature formation of nanocrystalline β-SiC with high surface area and mesoporosity via reaction of mesoporous carbon and silicon powder

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