TY - GEN
T1 - Low-loss porous silicon substrates for microwave and millimeter applications
AU - Guo, F.
AU - Zhang, L.
AU - Sun, Z.
AU - Zhu, Z.
AU - Chu, J.
PY - 2008
Y1 - 2008
N2 - This paper propose the utilization of a photolithographic process to elevate the metal lines position that relative to the wafer plane, in order to take advantage from the signal propagation practically on-the-air, gained an almost ideal TEM mode of propagation in CPW structure. S-parameter and coupling degree of CPW with Porous Si (PS), SOI and high resistivity Silicon (HRS), SOI substrates are compared.
AB - This paper propose the utilization of a photolithographic process to elevate the metal lines position that relative to the wafer plane, in order to take advantage from the signal propagation practically on-the-air, gained an almost ideal TEM mode of propagation in CPW structure. S-parameter and coupling degree of CPW with Porous Si (PS), SOI and high resistivity Silicon (HRS), SOI substrates are compared.
UR - https://www.scopus.com/pages/publications/58049117581
U2 - 10.1109/ICIMW.2008.4665669
DO - 10.1109/ICIMW.2008.4665669
M3 - 会议稿件
AN - SCOPUS:58049117581
SN - 9781424421206
T3 - 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008
BT - 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008
T2 - 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008
Y2 - 15 September 2008 through 19 September 2008
ER -