Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

C. P. Jiang; Z. M. Huang; Z. F. Li; J. Yu; S. L. Guo; W. Lu; J. H. Chu; L. J. Cui; Z. P. Zeng; Z. P. Zhu; B. Q. Wang

doi:10.1063/1.1396818

Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

C. P. Jiang^*
, Z. M. Huang
, Z. F. Li
, J. Yu
, S. L. Guo
, W. Lu
, J. H. Chu
, L. J. Cui
, Z. P. Zeng
, Z. P. Zhu
, B. Q. Wang

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics
Chinese Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In_0.52Al_0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses.

源语言	英语
页（从-至）	1375-1377
页数	3
期刊	Applied Physics Letters
卷	79
期	9
DOI	https://doi.org/10.1063/1.1396818
出版状态	已出版 - 27 8月 2001
已对外发布	是

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@article{1052bf0750924188912a9a678c1f0db3,

title = "Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates",

abstract = "InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses.",

author = "Jiang, \{C. P.\} and Huang, \{Z. M.\} and Li, \{Z. F.\} and J. Yu and Guo, \{S. L.\} and W. Lu and Chu, \{J. H.\} and Cui, \{L. J.\} and Zeng, \{Z. P.\} and Zhu, \{Z. P.\} and Wang, \{B. Q.\}",

year = "2001",

month = aug,

day = "27",

doi = "10.1063/1.1396818",

language = "英语",

volume = "79",

pages = "1375--1377",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

AU - Jiang, C. P.

AU - Huang, Z. M.

AU - Li, Z. F.

AU - Yu, J.

AU - Guo, S. L.

AU - Lu, W.

AU - Chu, J. H.

AU - Cui, L. J.

AU - Zeng, Z. P.

AU - Zhu, Z. P.

AU - Wang, B. Q.

PY - 2001/8/27

Y1 - 2001/8/27

N2 - InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses.

AB - InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses.

UR - https://www.scopus.com/pages/publications/18044401970

U2 - 10.1063/1.1396818

DO - 10.1063/1.1396818

M3 - 文章

AN - SCOPUS:18044401970

SN - 0003-6951

VL - 79

SP - 1375

EP - 1377

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

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