Large Tunneling Magnetoresistance in VSe                         2                         /MoS                         2                          Magnetic Tunnel Junction

Jiaqi Zhou; Junfeng Qiao; Chun Gang Duan; Arnaud Bournel; Kang L. Wang; Weisheng Zhao

doi:10.1021/acsami.9b02493

Large Tunneling Magnetoresistance in VSe ₂ /MoS ₂ Magnetic Tunnel Junction

Jiaqi Zhou
, Junfeng Qiao
, Chun Gang Duan
, Arnaud Bournel
, Kang L. Wang
, Weisheng Zhao^*

^*此作品的通讯作者

物理与电子科学学院

Beihang University
Centre de Nanosciences et de Nanotechnologies
University of California at Los Angeles

科研成果: 期刊稿件 › 文章 › 同行评审

93 引用（Scopus）

摘要

Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe ₂ /MoS ₂ heterojunction, where the VSe ₂ monolayer acts as a ferromagnet with roomerature ferromagnetism. We propose the concept of spin-orbit torque (SOT) vdW MTJ with reliable reading and efficient writing operations. The nonequilibrium study reveals a large tunneling magnetoresistance of 846% at 300 K, identifying significantly its parallel and antiparallel states. Thanks to the strong spin Hall conductivity of MoS ₂ , SOT is promising for the magnetization switching of VSe ₂ free layer. Quantum-well states come into being and resonances appear in MTJ, suggesting that the voltage control can adjust transport properties effectively. The SOT vdW MTJ based on VSe ₂ /MoS ₂ provides desirable performance and experimental feasibility, offering new opportunities for 2D spintronics.

源语言	英语
页（从-至）	17647-17653
页数	7
期刊	ACS Applied Materials and Interfaces
卷	11
期	19
DOI	https://doi.org/10.1021/acsami.9b02493
出版状态	已出版 - 15 5月 2019

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10.1021/acsami.9b02493

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Zhou, J., Qiao, J., Duan, C. G., Bournel, A., Wang, K. L., & Zhao, W. (2019). Large Tunneling Magnetoresistance in VSe ₂ /MoS ₂ Magnetic Tunnel Junction ACS Applied Materials and Interfaces, 11(19), 17647-17653. https://doi.org/10.1021/acsami.9b02493

@article{97db520db0dc4785a5145c5d4a80e65a,

title = " Large Tunneling Magnetoresistance in VSe 2 /MoS 2 Magnetic Tunnel Junction ",

abstract = " Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe 2 /MoS 2 heterojunction, where the VSe 2 monolayer acts as a ferromagnet with roomerature ferromagnetism. We propose the concept of spin-orbit torque (SOT) vdW MTJ with reliable reading and efficient writing operations. The nonequilibrium study reveals a large tunneling magnetoresistance of 846\% at 300 K, identifying significantly its parallel and antiparallel states. Thanks to the strong spin Hall conductivity of MoS 2 , SOT is promising for the magnetization switching of VSe 2 free layer. Quantum-well states come into being and resonances appear in MTJ, suggesting that the voltage control can adjust transport properties effectively. The SOT vdW MTJ based on VSe 2 /MoS 2 provides desirable performance and experimental feasibility, offering new opportunities for 2D spintronics.",

keywords = "ab initio calculation, magnetic tunnel junction, spin Hall effect, tunneling magnetoresistance, vdW heterojunction",

author = "Jiaqi Zhou and Junfeng Qiao and Duan, \{Chun Gang\} and Arnaud Bournel and Wang, \{Kang L.\} and Weisheng Zhao",

note = "Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = may,

day = "15",

doi = "10.1021/acsami.9b02493",

language = "英语",

volume = "11",

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journal = "ACS Applied Materials and Interfaces",

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}

Zhou, J, Qiao, J, Duan, CG, Bournel, A, Wang, KL & Zhao, W 2019, ' Large Tunneling Magnetoresistance in VSe ₂ /MoS ₂ Magnetic Tunnel Junction ', ACS Applied Materials and Interfaces, 卷 11, 号码 19, 页码 17647-17653. https://doi.org/10.1021/acsami.9b02493

Large Tunneling Magnetoresistance in VSe ₂ /MoS ₂ Magnetic Tunnel Junction . / Zhou, Jiaqi; Qiao, Junfeng; Duan, Chun Gang 等.
在: ACS Applied Materials and Interfaces, 卷 11, 号码 19, 15.05.2019, 页码 17647-17653.

科研成果: 期刊稿件 › 文章 › 同行评审

TY - JOUR

T1 - Large Tunneling Magnetoresistance in VSe 2 /MoS 2 Magnetic Tunnel Junction

AU - Zhou, Jiaqi

AU - Qiao, Junfeng

AU - Duan, Chun Gang

AU - Bournel, Arnaud

AU - Wang, Kang L.

AU - Zhao, Weisheng

PY - 2019/5/15

Y1 - 2019/5/15

N2 - Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe 2 /MoS 2 heterojunction, where the VSe 2 monolayer acts as a ferromagnet with roomerature ferromagnetism. We propose the concept of spin-orbit torque (SOT) vdW MTJ with reliable reading and efficient writing operations. The nonequilibrium study reveals a large tunneling magnetoresistance of 846% at 300 K, identifying significantly its parallel and antiparallel states. Thanks to the strong spin Hall conductivity of MoS 2 , SOT is promising for the magnetization switching of VSe 2 free layer. Quantum-well states come into being and resonances appear in MTJ, suggesting that the voltage control can adjust transport properties effectively. The SOT vdW MTJ based on VSe 2 /MoS 2 provides desirable performance and experimental feasibility, offering new opportunities for 2D spintronics.

AB - Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe 2 /MoS 2 heterojunction, where the VSe 2 monolayer acts as a ferromagnet with roomerature ferromagnetism. We propose the concept of spin-orbit torque (SOT) vdW MTJ with reliable reading and efficient writing operations. The nonequilibrium study reveals a large tunneling magnetoresistance of 846% at 300 K, identifying significantly its parallel and antiparallel states. Thanks to the strong spin Hall conductivity of MoS 2 , SOT is promising for the magnetization switching of VSe 2 free layer. Quantum-well states come into being and resonances appear in MTJ, suggesting that the voltage control can adjust transport properties effectively. The SOT vdW MTJ based on VSe 2 /MoS 2 provides desirable performance and experimental feasibility, offering new opportunities for 2D spintronics.

KW - ab initio calculation

KW - magnetic tunnel junction

KW - spin Hall effect

KW - tunneling magnetoresistance

KW - vdW heterojunction

UR - https://www.scopus.com/pages/publications/85065530159

U2 - 10.1021/acsami.9b02493

DO - 10.1021/acsami.9b02493

M3 - 文章

C2 - 30983319

AN - SCOPUS:85065530159

SN - 1944-8244

VL - 11

SP - 17647

EP - 17653

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 19

ER -

Large Tunneling Magnetoresistance in VSe 2 /MoS 2 Magnetic Tunnel Junction

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Large Tunneling Magnetoresistance in VSe ₂ /MoS ₂ Magnetic Tunnel Junction